FDMC89521L
High-power switching device for demanding applications
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $1.045 | $1.04 |
10 | $1.022 | $10.22 |
30 | $1.008 | $30.24 |
100 | $0.992 | $99.20 |
在庫:6,894
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FDMC89521L
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パッケージ/ケース : WDFN EP
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Brand : onsemi
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Components Classification : FET, MOSFET Arrays
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日付シート : FDMC89521L データシート (PDF)
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Series : FDMC89521L
概要 FDMC89521L
The innovative FDMC89521L houses two 60 V N-Channel MOSFETs within a dual Power 33 package, meticulously crafted to deliver unparalleled thermal capabilities. Measuring at 3 mm X 3 mm MLP, this compact package is optimized for efficient heat dissipation, ensuring the reliable operation of the device even in challenging conditions. With a focus on thermal performance, this product is engineered to meet the rigorous demands of modern applications
主な特長
- Package size: 7 mm x 4.2 mm
- Max voltage rating: 200 VDC
- Type A epoxy
- Thermal resistance: 50 K/W
- Lead-free solderable terminals
- RoHS compliant with Directive 2011/65/EU
応用
- Apple
- Orange
- Banana
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | FDMC89521L | Product Status | Active |
Technology | Si | Configuration | Dual |
FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) | Rds On (Max) @ Id, Vgs | 17mOhm @ 8.2A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1635pF @ 30V | Power - Max | 1.9W (Ta), 16W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Package / Case | Power-33-8 | Supplier Device Package | 8-Power33 (3x3) |
Base Product Number | FDMC89521 | Manufacturer | onsemi |
Product Category | MOSFET | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 8.2 A | Rds On - Drain-Source Resistance | 17 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 24 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.9 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Brand | onsemi / Fairchild | Height | 0.8 mm |
Length | 3 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Width | 3 mm |
Unit Weight | 0.006914 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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