FDT3N40TF
This product is a N-Channel Power MOSFET with UniFETTM technology
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.555 | $1.56 |
| 10 | $1.345 | $13.45 |
| 30 | $1.214 | $36.42 |
| 100 | $1.031 | $103.10 |
| 500 | $0.970 | $485.00 |
| 1000 | $0.944 | $944.00 |
在庫：8,914
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FDT3N40TF
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パッケージ/ケース : TO-261-4
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ブランド : onsemi
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : FDT3N40TF データシート (PDF)
概要 FDT3N40TF
The FDT3N40TF UniFET™ MOSFET is a cutting-edge high voltage MOSFET that utilizes innovative planar stripe and DMOS technology to enhance performance in power converter applications. With a focus on minimizing on-state resistance and optimizing switching capabilities, this MOSFET is designed to meet the demands of modern electronics
主な特長
- High-temperature tested ( Up to 175°C)
- Low input capacitance (Typ. 2pF)
- Fast switching speed (Typ. 60ns)
応用
- Gaming Consoles
- Vacuum Cleaners
- Soundbars
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | UniFET™ | Product Status | Obsolete |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400 V | Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 25 V |
| Power Dissipation (Max) | 2W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | SOT-223-4 |
| Package / Case | TO-261-4, TO-261AA | Base Product Number | FDT3N40 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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支払い
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特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
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