FDT457N
N-type Metal Oxide Semiconductor Field-Effect Transistor with a voltage rating of 30V and current capacity of 5A in a 4-pin SOT-223 package
在庫：5,413
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : FDT457N
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パッケージ/ケース : TO-261-4
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Brand : onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FDT457N データシート (PDF)
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Series : FDT457N
概要 FDT457N
Designed for N Channel applications, the FDT457N MOSFET offers exceptional performance in a compact package. With a maximum drain source voltage of 30V and a continuous drain current of 5A, it can tackle demanding tasks with ease. The on resistance of 60mohm at a test voltage of 10V ensures efficient operation. Housed in a space-saving SOT-223 package and RoHS compliant, this MOSFET is both practical and environmentally friendly
主な特長
- Ultra-low RDS(on) for maximum power conversion efficiency
- High current handling for demanding systems
- Compact surface mount package for space savings
応用
- Highly versatile product.
- Suitable for multiple uses.
- Can be used in various ways.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5A, 10V | Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 5 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 15 V | Power Dissipation (Max) | 3W (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 | Package / Case | TO-261-4, TO-261AA |
| Base Product Number | FDT457 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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