FDT86113LZ
The FDT86113LZ transistor is an N-channel MOSFET with a 4-Pin SOT-223 package, featuring a current rating of 3
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.521 | $0.52 |
| 10 | $0.434 | $4.34 |
| 30 | $0.391 | $11.73 |
| 100 | $0.347 | $34.70 |
| 500 | $0.320 | $160.00 |
| 1000 | $0.307 | $307.00 |
在庫：5,349
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FDT86113LZ
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パッケージ/ケース : TO-261-4
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ブランド : onsemi
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : FDT86113LZ データシート (PDF)
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Series : FDT86113LZ
概要 FDT86113LZ
With the FDT86113LZ, you can expect nothing but the best in N-Channel logic Level MOSFETs. Our advanced Power Trench® process has been specially tailored to reduce on-state resistance and improve switching performance, giving you a top-of-the-line product that you can rely on. Additionally, the inclusion of a G-S zener further enhances the ESD voltage level, adding an extra layer of protection to this already exceptional product
主な特長
- Compact surface mount package
- Low saturation voltage
- High reliability
- High power density
応用
- Beauty Products
- Electronics Gadgets
- Sports Equipment
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | PowerTrench® | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 100mOhm @ 3.3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 50 V |
| Power Dissipation (Max) | 2.2W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | SOT-223-4 |
| Package / Case | TO-261-4, TO-261AA | Base Product Number | FDT86113 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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