FQH8N100C
Transistor type: N-MOSFET
在庫：7,125
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FQH8N100C
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パッケージ/ケース : TO-247-3
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Brand : onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FQH8N100C データシート (PDF)
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Series : FQH8N100C
概要 FQH8N100C
Revolutionize your power management systems with the FQH8N100C, a state-of-the-art N-Channel power MOSFET that redefines industry standards. Its advanced design, featuring a proprietary combination of planar stripe and DMOS technology, results in unmatched on-state resistance reduction and exceptional switching prowess. Whether you're working on power supplies, power factor correction circuits, or lighting applications, this MOSFET offers the reliability and performance you need to succeed. Don't settle for mediocrity in your designs – choose the FQH8N100C for unparalleled quality and efficiency
主な特長
- High-speed switching capability
- Low thermal resistance
- Rugged package design
応用
- Professional Office Equipment
- Comfortable Furniture Pieces
- Useful Household Items
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | QFET® | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.45Ohm @ 4A, 10V | Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V | Power Dissipation (Max) | 225W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 | Package / Case | TO-247-3 |
| Base Product Number | FQH8N100 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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