HGTG40N60B3
70A I(C), 600V V(BR)CES Insulated Gate Bipolar Transistor, N-Channel, TO-247
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $3.774 | $3.77 |
10 | $3.692 | $36.92 |
30 | $3.635 | $109.05 |
100 | $3.582 | $358.20 |
在庫:6,163
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : HGTG40N60B3
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パッケージ/ケース : TO-247-3
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ブランド : onsemi
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コンポーネントのカテゴリ : Single IGBTs
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日付シート : HGTG40N60B3 データシート (PDF)
概要 HGTG40N60B3
The HGTG40N60B3 is a revolutionary high voltage switching device that offers the perfect blend of MOSFET and bipolar transistor technology. With its high input impedance and low on-state conduction loss, this device surpasses traditional options on the market. Its on-state voltage drop remains consistently low, even when subjected to temperatures ranging from 25°C to 150°C. This makes it an ideal choice for numerous high voltage switching applications that require minimal conduction losses. From AC and DC motor controls to power supplies and solenoid drivers, the HGTG40N60B3 ensures efficient operation at moderate frequencies
主な特長
- Reliable Operation
- Isolated Construction
- High Isolation Voltage
- Low Current Consumption
応用
- Power converters
- Electric vehicles
- Wind turbines
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tube | Product Status | Obsolete |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 70 A |
Current - Collector Pulsed (Icm) | 330 A | Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
Power - Max | 290 W | Switching Energy | 1.05mJ (on), 800µJ (off) |
Input Type | Standard | Gate Charge | 250 nC |
Td (on/off) @ 25°C | 47ns/170ns | Test Condition | 480V, 40A, 3Ohm, 15V |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Package / Case | TO-247-3 | Supplier Device Package | TO-247-3 |
Base Product Number | HGTG40 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、または DHL.SG、または YTC。
部品のパッケージング保証: 100% ESD 帯電防止保護を特徴とする当社のパッケージングには、高い靭性と優れた緩衝機能が組み込まれています。
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