HGTP10N120BN
This IGBT NPT, known as HGTP10N120BN, has a power dissipation of 298 W and features a TO-220-3 Through Hole package
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $6.340 | $6.34 |
10 | $5.683 | $56.83 |
30 | $5.283 | $158.49 |
100 | $4.947 | $494.70 |
在庫:9,243
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部品番号 : HGTP10N120BN
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パッケージ/ケース : TO-220-3
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ブランド : Onsemi
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コンポーネントのカテゴリ : Single IGBTs
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日付シート : HGTP10N120BN データシート (PDF)
概要 HGTP10N120BN
When it comes to high voltage switching applications, the HGTP10N120BN offers unmatched performance and efficiency. Its NPT IGBT design ensures low conduction losses, making it an excellent choice for applications that require precision and reliability. Whether you're working on a solar inverter or a power supply unit, this IGBT is designed to meet the demands of modern electronics, providing a seamless experience for both designers and end-users. Trust the HGTP10N120BN to deliver exceptional results in any high voltage switching application
主な特長
- Faster Switching Performance
- Limited Inductance
- Low Thermal Resistance
- Epoxy Bonded Leads
応用
- Power Protection System
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-220-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.45 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 35 A |
Pd - Power Dissipation | 298 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTP10N120BN |
Brand | onsemi / Fairchild | Continuous Collector Current | 35 A |
Continuous Collector Current Ic Max | 35 A | Gate-Emitter Leakage Current | +/- 250 nA |
Height | 9.4 mm | Length | 10.67 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 800 |
Subcategory | IGBTs | Width | 4.83 mm |
Part # Aliases | HGTP10N120BN_NL | Unit Weight | 0.063493 oz |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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