HGTG11N120CN
1200V voltage rating
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $5.949 | $5.95 |
137 | $2.375 | $325.38 |
548 | $2.294 | $1,257.11 |
959 | $2.255 | $2,162.54 |
在庫:6,681
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部品番号 : HGTG11N120CN
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パッケージ/ケース : TO-247-3
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ブランド : Onsemi
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コンポーネントのカテゴリ : Single IGBTs
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日付シート : HGTG11N120CN データシート (PDF)
概要 HGTG11N120CN
When it comes to high current handling and fast switching speeds, the HGTG11N120CN from International Rectifier is the go-to solution. This high voltage, high-speed power IGBT is engineered for efficiency and performance, with its low voltage drop, low on-state conduction losses, and advanced trench gate technology. Moreover, the inclusion of overcurrent and overtemperature protection ensures safe operation in critical applications
主な特長
- Promotes energy efficiency and savings
- Low power consumption ensured
- Optimized for high-frequency operation
応用
- Powerful motor control
- Renewable energy solutions
- Efficient industrial automation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.1 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 43 A |
Pd - Power Dissipation | 298 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTG11N120CN |
Brand | onsemi / Fairchild | Continuous Collector Current | 55 A |
Continuous Collector Current Ic Max | 43 A | Gate-Emitter Leakage Current | +/- 250 nA |
Height | 20.82 mm | Length | 15.87 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 150 |
Subcategory | IGBTs | Width | 4.82 mm |
Part # Aliases | HGTG11N120CN_NL | Unit Weight | 0.225401 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品のパッケージング保証: 100% ESD 帯電防止保護を特徴とする当社のパッケージングには、高い靭性と優れた緩衝機能が組み込まれています。
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