IHW30N110R3
High-Voltage N-Channel Transistor
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $16.410 | $16.41 |
200 | $6.350 | $1,270.00 |
500 | $6.128 | $3,064.00 |
1000 | $6.018 | $6,018.00 |
在庫:8,089
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IHW30N110R3
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パッケージ/ケース : TO-247-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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日付シート : IHW30N110R3 データシート (PDF)
概要 IHW30N110R3
Safety is a top priority with the IHW30N110R3, as it comes equipped with a built-in thermal diode for continuous temperature monitoring, guaranteeing secure operation even under intense load conditions. Moreover, its advanced protection mechanisms against short-circuits, overcurrent, and overtemperature incidents ensure the device remains unharmed in the face of electrical faults
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tube | Product Status | Obsolete |
IGBT Type | Trench | Voltage - Collector Emitter Breakdown (Max) | 1100 V |
Current - Collector (Ic) (Max) | 60 A | Current - Collector Pulsed (Icm) | 90 A |
Vce(on) (Max) @ Vge, Ic | 1.75V @ 15V, 30A | Power - Max | 333 W |
Switching Energy | 1.15mJ (off) | Input Type | Standard |
Gate Charge | 180 nC | Td (on/off) @ 25°C | -/350ns |
Test Condition | 600V, 30A, 15Ohm, 15V | Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Package / Case | TO-247-3 |
Supplier Device Package | PG-TO247-3-1 | Base Product Number | IHW30N110 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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