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SIHB30N60E-GE3

Vishay SIHB30N60E-GE3 N-channel MOSFET Transistor, 29 A, 600 V, 3-Pin D2PAK

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概要 SIHB30N60E-GE3

The SIHB30N60E-GE3 is a powerhouse in the world of insulated gate bipolar transistors (IGBTs), designed to meet the rigorous demands of modern power electronics applications. With a robust 600V voltage rating and a continuous current rating of 30A, this IGBT is well-suited for handling high power loads in industrial and automotive systems. Its low on-state voltage drop not only ensures efficient power conversion but also contributes to minimizing energy loss during operation. The device's fast switching speed enables precise control of power flow, allowing for rapid on/off cycling as needed. Housed in a compact TO-263 package, it is easy to integrate into existing circuit designs, and its ability to operate at high temperatures further enhances its reliability in challenging environments

主な特長

  • High reliability performance
  • Low noise emission
  • Easy circuit integration
  • Rugged environmental tolerance

応用

  • Fluorescent ballast lighting
  • Renewable energy solutions
  • Switch mode power supplies

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Package Tube Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 100 V
Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Base Product Number SIHB30

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    部品の品質保証: 365 日

    返品・返金：90日以内

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