IPD200N15N3G
252 package N-channel power MOSFET with a current rating of 50A, voltage rating of 150V, and 0.02ohm resistance
在庫：7,176
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- 365日の品質保証
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部品番号 : IPD200N15N3G
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パッケージ/ケース : DPAK
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ブランド : Infineon Technologies
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IPD200N15N3G データシート (PDF)
概要 IPD200N15N3G
N-Channel 150 V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-3
主な特長
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | OptiMOS™ | Product Status | Obsolete |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V | Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V | Rds On (Max) @ Id, Vgs | 20mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 90µA | Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 75 V |
| Power Dissipation (Max) | 150W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | Base Product Number | IPD200N |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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