IPD60R380C6
Infineon IPD60R380C6 N-channel MOSFET Transistor, 10.6 A, 650V, TO-252 3-Pin
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.580 | $1.58 |
| 10 | $1.311 | $13.11 |
| 30 | $1.146 | $34.38 |
| 100 | $0.972 | $97.20 |
| 500 | $0.830 | $415.00 |
| 1000 | $0.798 | $798.00 |
在庫：7,210
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IPD60R380C6
-
パッケージ/ケース : DPAK (TO-252)
-
Brand : Infineon
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IPD60R380C6 データシート (PDF)
-
Series : XPD60R380
概要 IPD60R380C6
Housed in a TO-252 package, the IPD60R380C6 offers both thermal and electrical conductivity, enabling efficient heat dissipation for optimal performance. Its surface-mount design makes it simple to integrate into existing circuit designs, saving time and effort during installation. Plus, its fast switching speed not only reduces power losses but also enhances efficiency in various switching applications, such as motor control, power supplies, and inverters
主な特長
- Advanced security features integrated
- Data encryption supported
- Fault detection and correction
- Real-time reporting available
応用
- Innovative energy solutions
- Efficient power management
- Cutting-edge electronic devices
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| VDS max | 600.0 V | Ptot max | 83.0 W |
| IDpuls max | 30.0 A | VGS(th) max | 3.5 V |
| VGS(th) min | 2.5 V | RthJC max | 1.5 K/W |
| RthJA max | 62.0 K/W | Operating Temperature min | -55.0 °C |
| Polarity | N | Mounting | SMT |
| ID max | 10.6 A | RDS (on) max | 380.0 mΩ |
| Package | DPAK (TO-252) |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IPD25N06S4L-30
Transistor MOSFET N-Channel 60V 25A for Automotive Use
IPB042N10N3GATMA1
MOSFET N-Ch 100V 100A D2PAK -2 OptiMOS 3
IPB044N15N5ATMA1
Transistor, N-channel MOSFET with 150V voltage and 174A current rating in a 7-pin D2PAK package
IPC100N04S51R9ATMA1
40V N-Channel Transistor for Automotive Use, 100A, 8-Pin TDSON EP Package, Tape and Reel
IPC100N04S51R2ATMA1
Product IPC100N04S51R2ATMA1, labeled as MOSFET_(20V 40V), serves as a high-performance semiconductor device for voltage regulation and control
IPD053N08N3GATMA1
MOSFET with Trench technology for 40-100V voltage range
IPD100N04S402ATMA1
Trans MOSFET N-CH 40V 100A Automotive
IPB017N10N5ATMA1
Available in Tape and Reel packaging for easy storage and handling
IPB020N10N5ATMA1
This MOSFET is an N-channel type suitable for high-power applications
IPB020N10N5LFATMA1
Low RDS(on) and wide safe operating area in PG-TO263-3 package, RoHS compliant
NESG270034-T1-AZ
Description of NESG270034-T1-AZ: This product operates at 9
MWI150-06A8
50-06A8 product description 3 Phase Bridge IGBT Module 170 A max 600 V Screw Mount IXYS
IRL2703PBF
N-channel power MOSFET
MMBT3906T-7-F
Bipolar Junction Transistor General Purpose PNP 40V 0.2A SOT-523 Package
BSS314PEH6327XTSA1
MOSFET P-Channel device with -30V voltage limit, -1.5A current rating, and SOT-23-3 packaging
MMUN2113LT1G
PNP Bipolar Transistor with BRT Technology
PDTA114TT,215
Describing PDTA114TT,215: It belongs to the PDTA114T series, incorporating PNP transistors with built-in resistors
MJD42CT4G
Explore the capabilities of MJD42CT4G
IRFB4710PBF
This MOSFET has a gate charge of 110nC, making it suitable for high-speed switching applications
MAC97A8G
MAC97A8G is a two-way thyristor with a rating of 10mA forward current and 5mA reverse current, capable of handling voltages up to 800V