IPT013N08NM5LF
ROHS compliant MOSFET suitable for high voltage applications up to 80V
在庫:8,089
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部品番号 : IPT013N08NM5LF
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パッケージ/ケース : 8-PowerSFN
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : IPT013N08NM5LF データシート (PDF)
概要 IPT013N08NM5LF
The IPT013N08NM5LF from Infineon is a groundbreaking OptiMOS™ 5 linear FET 80V designed to offer exceptional performance in a compact TO-Leadless (TOLL) package. With the lowest on-state resistance RDS(on) in the industry and a wide safe operating area (SOA) at 25˚C, this linear FET is revolutionizing the way engineers approach power management. The OptiMOS™ technology overcomes the traditional trade-off between on-state resistance and linear mode capability, providing unparalleled efficiency and reliability in high-current applications. Whether you're dealing with in-rush current, hot-swap scenarios, or stringent protection requirements, the IPT013N08NM5LF is the ideal solution for telecom and battery management systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | OptiMOS™ 5 | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V | Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 333A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 1.3mOhm @ 150A, 10V |
Vgs(th) (Max) @ Id | 4.1V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 40 V |
Power Dissipation (Max) | 3.1W (Ta), 278W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-HSOF-8 |
Package / Case | 8-PowerSFN | Base Product Number | IPT013N |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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