SI7852DP-T1-E3
VISHAY - SI7852DP-T1-E3 - MOSFET,N CH,80V,7.6A,PPSO8
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部品番号 : SI7852DP-T1-E3
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パッケージ/ケース : PowerPAKSO-8
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ブランド : Siliconix
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : SI7852DP-T1-E3 データシート (PDF)
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Series : SI7852DP
概要 SI7852DP-T1-E3
The SI7852DP-T1-E3 from Vishay Siliconix is a top-of-the-line dual N-channel MOSFET, specifically engineered for high-frequency power conversion applications. With its dual MOSFET design, this device offers exceptional efficiency and versatility for various circuit configurations. Its low on-resistance ensures minimal power loss, while its high switching speed makes it ideal for applications requiring rapid operation, such as switching voltage regulators and power supplies. Additionally, its compact package size not only saves valuable board space but also allows for designs with high power density. Rest assured, this MOSFET is RoHS compliant, meaning it adheres to strict environmental regulations, providing peace of mind for both manufacturers and end-users
主な特長
- This is a low-voltage, high-current power MOSFET designed for robust performance
- With a 1.7 mΩ on-resistance, it minimizes energy losses and ensures reliable operation
- Fast switching speeds and robust thermal performance make it ideal for high-power applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-SO-8 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 7.6 A | Rds On - Drain-Source Resistance | 16.5 mOhms |
Vgs - Gate-Source Voltage | + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 34 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.9 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI7 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 31 ns |
Forward Transconductance - Min | 25 S | Product Type | MOSFET |
Rise Time | 11 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N Channel |
Typical Turn-Off Delay Time | 40 ns | Typical Turn-On Delay Time | 17 ns |
Part # Aliases | SI7852DP-E3 | Unit Weight | 0.017870 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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