IPT020N10N5ATMA1
20N10N5ATMA1, EA
在庫:9,396
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IPT020N10N5ATMA1
-
パッケージ/ケース : 8-PowerSFN
-
Brand : Infineon Technologies
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IPT020N10N5ATMA1 データシート (PDF)
-
Series : IPT020N10N5
概要 IPT020N10N5ATMA1
Infineon Technologies' IPT020N10N5ATMA1 power MOSFET is a top-notch device for high-power applications. Its high voltage and current ratings, coupled with a low on-resistance and low gate charge, make it an ideal choice for power supplies, motor control, and DC/DC converters. Additionally, its TO-220 package makes it easy to use in a variety of circuit designs, while its wide operating temperature range ensures reliable performance under harsh conditions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | OptiMOS™5 | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 260A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 2mOhm @ 150A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 202µA | Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 50 V |
Power Dissipation (Max) | 273W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-HSOF-8-1 |
Package / Case | 8-PowerSFN | Base Product Number | IPT020 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IPD25N06S4L-30](/files/uploads/product/s/7993550de14049b4a82e2ce39e835e15.webp)
IPD25N06S4L-30
Transistor MOSFET N-Channel 60V 25A for Automotive Use
![IPB042N10N3GATMA1](/img/package/d2pak.jpg)
IPB042N10N3GATMA1
MOSFET N-Ch 100V 100A D2PAK -2 OptiMOS 3
![IPB044N15N5ATMA1](/img/package/to263.jpg)
IPB044N15N5ATMA1
Transistor, N-channel MOSFET with 150V voltage and 174A current rating in a 7-pin D2PAK package
![IPC100N04S51R9ATMA1](/img/package/power33.jpg)
IPC100N04S51R9ATMA1
40V N-Channel Transistor for Automotive Use, 100A, 8-Pin TDSON EP Package, Tape and Reel
![IPC100N04S51R2ATMA1](/img/package/son8.jpg)
IPC100N04S51R2ATMA1
Product IPC100N04S51R2ATMA1, labeled as MOSFET_(20V 40V), serves as a high-performance semiconductor device for voltage regulation and control
![IPD053N08N3GATMA1](/img/package/dpak2.jpg)
IPD053N08N3GATMA1
MOSFET with Trench technology for 40-100V voltage range
![IPD100N04S402ATMA1](/img/package/dpak2.jpg)
IPD100N04S402ATMA1
Trans MOSFET N-CH 40V 100A Automotive
![IPB017N10N5ATMA1](/img/package/to263.jpg)
IPB017N10N5ATMA1
Available in Tape and Reel packaging for easy storage and handling
![IPB020N10N5ATMA1](/img/package/d2pak3.jpg)
IPB020N10N5ATMA1
This MOSFET is an N-channel type suitable for high-power applications
![IPB020N10N5LFATMA1](/img/package/d2pak.jpg)
IPB020N10N5LFATMA1
Low RDS(on) and wide safe operating area in PG-TO263-3 package, RoHS compliant
![PTB20111](/img/product.png)
PTB20111
-Element, Ultra High Frequency Band
![ZXMP6A17E6QTA](/img/package/sot26.jpg)
ZXMP6A17E6QTA
Trans MOSFET P-CH 60V 2.3A Automotive AEC-Q101 6-Pin SOT-26 T/R
![CM400DY-66H](/img/package/module.jpg)
CM400DY-66H
Mitsubishi power transistor module CM400DY-66H
![APT8015JVFR](/img/package/sot.jpg)
APT8015JVFR
High-power single transistor module APT8015JVFR with 800V voltage rating
![IXTH130N10T](/img/package/to247.jpg)
IXTH130N10T
High-power N-type MOSFET rated at 100V and 130A
![SI4850EY-T1-E3](/img/package/soic8.jpg)
SI4850EY-T1-E3
Transistor metal-oxide-semiconductor field-effect transistor N-channel 60V 6A 8-pin small outline integrated circuit package N tape and reel
![MBC13900T1](/img/package/sot343.jpg)
MBC13900T1
MBC13900T1 by NXP Semiconductors
![IRLR2905ZPBF](/img/package/to252.jpg)
IRLR2905ZPBF
42A current-carrying power transistor with a 55V voltage rating and a low on-resistance of 0.0135 ohms
![MJ10000](/img/package/to3.jpg)
MJ10000
Describing MJ10000
![NE3210S01-T1B](/img/package/so5.jpg)
NE3210S01-T1B
NE3210S01-T1B: A high-performance Trans JFET with a 4V voltage rating and a current capacity of 70mA