IXTH130N10T
High-power N-type MOSFET rated at 100V and 130A
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部品番号 : IXTH130N10T
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パッケージ/ケース : TO247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXTH130N10T データシート (PDF)
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Series : IXTH130N10
概要 IXTH130N10T
The IXTH130N10T Trench Gate Power MOSFETs are a game-changer for low voltage/high current applications. With an impressively low RDS(on), these MOSFETs ensure minimal power dissipation, making them perfect for energy-efficient designs. Whether it's for automotive use or other demanding environments, these MOSFETs can handle the heat with an operating junction temperature range of -40 °C to 175 °C
主な特長
- Data Acquisition Capabilities
- Real-Time Data Analysis
- Error Detection and Correction
応用
- Efficient power conversion
- Advanced battery charging
- Smooth motor control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | 100 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.0091 |
| Continuous Drain Current @ 25 ℃ (A) | 130 | Gate Charge (nC) | 104 |
| Input Capacitance, CISS (pF) | 5080 | Thermal resistance [junction-case] (K/W) | 0.42 |
| Configuration | Single | Package Type | TO-247 |
| Typical Reverse Recovery Time (ns) | 67 | Power Dissipation (W) | 360 |
| Sample Request | Yes | Check Stock | Yes |
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保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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