IPT60R028G7XTMA1
N-channel MOSFET rated at 600 volts and capable of handling currents up to 75 amps
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $13.989 | $13.99 |
| 200 | $5.414 | $1,082.80 |
| 500 | $5.224 | $2,612.00 |
| 1000 | $5.129 | $5,129.00 |
在庫：5,993
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IPT60R028G7XTMA1
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パッケージ/ケース : 8-PowerSFN
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : IPT60R028G7XTMA1 データシート (PDF)
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Series : IPT60R028G7
概要 IPT60R028G7XTMA1
The IPT60R028G7XTMA1 is a powerful MOSFET designed for high-power applications. With a N channel design, this MOSFET can handle a drain source voltage of 600V and a continuous drain current of 75A. Its Hsof-8 package makes it suitable for surface mounting, allowing for easy integration into various electronic systems. The Rds(On) test voltage of 10V ensures efficient performance, while the gate source threshold voltage max of 4V provides reliable control over the switching operation. Additionally, this MOSFET is RoHS compliant, meeting environmental standards for hazardous materials
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | CoolMOS™ G7 | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 28mOhm @ 28.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1.44mA | Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 4820 pF @ 400 V |
| Power Dissipation (Max) | 391W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PG-HSOF-8-2 |
| Package / Case | 8-PowerSFN | Base Product Number | IPT60R028 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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