IPT65R033G7XTMA1
Next-generation MOSFET Designed for High-Power Performance
在庫:7,951
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IPT65R033G7XTMA1
-
パッケージ/ケース : 8-PowerSFN
-
Brand : Infineon Technologies
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IPT65R033G7XTMA1 データシート (PDF)
-
Series : COOLMOS C7 GOLD
概要 IPT65R033G7XTMA1
N-Channel 650 V 69A (Tc) 391W (Tc) Surface Mount PG-HSOF-8-2
主な特長
- CoolMOS™ S7 technology enables 22mΩ RDS(on) in the smallest footprint
- Optimized price performance in low frequency switching applications
- High pulse current capability
- Kelvin Source pin improves switching performanceat high current
- TOLL package is MSL1 compliant, total Pb-free,has easy visual inspection leads
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | CoolMOS™ C7 | Product Status | Obsolete |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V | Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 33mOhm @ 28.9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1.44mA | Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 400 V |
Power Dissipation (Max) | 391W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-HSOF-8-2 |
Package / Case | 8-PowerSFN | Base Product Number | IPT65R033 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IPD25N06S4L-30](/files/uploads/product/s/7993550de14049b4a82e2ce39e835e15.webp)
IPD25N06S4L-30
Transistor MOSFET N-Channel 60V 25A for Automotive Use
![IPB042N10N3GATMA1](/img/package/d2pak.jpg)
IPB042N10N3GATMA1
MOSFET N-Ch 100V 100A D2PAK -2 OptiMOS 3
![IPB044N15N5ATMA1](/img/package/to263.jpg)
IPB044N15N5ATMA1
Transistor, N-channel MOSFET with 150V voltage and 174A current rating in a 7-pin D2PAK package
![IPC100N04S51R9ATMA1](/img/package/power33.jpg)
IPC100N04S51R9ATMA1
40V N-Channel Transistor for Automotive Use, 100A, 8-Pin TDSON EP Package, Tape and Reel
![IPC100N04S51R2ATMA1](/img/package/son8.jpg)
IPC100N04S51R2ATMA1
Product IPC100N04S51R2ATMA1, labeled as MOSFET_(20V 40V), serves as a high-performance semiconductor device for voltage regulation and control
![IPD053N08N3GATMA1](/img/package/dpak2.jpg)
IPD053N08N3GATMA1
MOSFET with Trench technology for 40-100V voltage range
![IPD100N04S402ATMA1](/img/package/dpak2.jpg)
IPD100N04S402ATMA1
Trans MOSFET N-CH 40V 100A Automotive
![IPB017N10N5ATMA1](/img/package/to263.jpg)
IPB017N10N5ATMA1
Available in Tape and Reel packaging for easy storage and handling
![IPB020N10N5ATMA1](/img/package/d2pak3.jpg)
IPB020N10N5ATMA1
This MOSFET is an N-channel type suitable for high-power applications
![IPB020N10N5LFATMA1](/img/package/d2pak.jpg)
IPB020N10N5LFATMA1
Low RDS(on) and wide safe operating area in PG-TO263-3 package, RoHS compliant
![IXFB60N80P](/img/package/to-3.jpg)
IXFB60N80P
MOSFET capable of handling 60 Amps at 800V, offering a low on-resistance of 0.14
![MTM861270LBF](/img/package/smd.jpg)
MTM861270LBF
Large Body Field-Effect Transistor for Mobile Technology Manager
![BYM300B170DN2](/img/package/module.jpg)
BYM300B170DN2
High-Power IGBT Modules N-Type 1.7KV 300A
![NVMFS5A140PLZT1G](/img/package/so8.jpg)
NVMFS5A140PLZT1G
MOSFET NVMFS5A140PLZT1G boasts a -40V voltage threshold and a resistance of 4.2 megohms, making it a suitable choice for single-channel setups
![IRF740SPBF](/img/package/d2pak3.jpg)
IRF740SPBF
VISHAY - IRF740SPBF. - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-263 (D2PAK), Surface Mount
![FCD4N60TM](/img/package/dpak.jpg)
FCD4N60TM
FCD4N60TM presents itself as a N-Channel MOSFET with a voltage threshold of 600V and a current capability of 7A, branded as SuperFET
![IRF2807STRLPBF](/img/package/d2pak3.jpg)
IRF2807STRLPBF
With a low on-resistance of 13mOhm, IRF2807STRLPBF offers efficient switching performance for high-current requirements up to 82A
![SI1427EDH-T1-GE3](/img/package/sot363.jpg)
SI1427EDH-T1-GE3
P-Channel MOSFET with a 20V rating and 2A current capacity in a 6-pin SC-70 package, available in tape and reel packaging
![STD30PF03LT4](/img/package/to252.jpg)
STD30PF03LT4
STD30PF03LT4 P-Channel MOSFET, 24 A, 30 V STripFET, 3-Pin DPAK STMicroelectronics
![IXXH50N60C3D1](/img/package/to247.jpg)
IXXH50N60C3D1
600V/100Amp XPT IGBT C3-Class IGBT Transistors CoPacked