• packageimg
packageimg

IPW65R048CFDA

MOSFET N-Ch 650V 63.3A TO247-3

数量 単価(USD) 合計金額
1 $26.115 $26.12

在庫：7,493

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください IPW65R048CFDA このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IPW65R048CFDA

Experience top-of-the-line performance with the IPW65R048CFDA Power Field-Effect Transistor, engineered for excellence in power management. Rated for a maximum current of 63.3A and a voltage of 650V, this transistor exhibits a low on-resistance of 0.048ohm, ensuring minimal power loss and high efficiency. Its N-Channel configuration and Silicon Metal-oxide Semiconductor technology guarantee reliable operation in a variety of applications. Encased in a TO-247 package with a durable GREEN plastic housing, the IPW65R048CFDA is built to withstand demanding environments and harsh operating conditions. Whether used in switch-mode power supplies, motor control circuits, or electric vehicle systems, this transistor delivers unparalleled performance and versatility

主な特長

  • Ultra-fast body diode
  • Very high commutation ruggedness
  • Extremely low losses due to very low FOM Rdson^Qg and Eoss
  • Easy to use/drive
  • Qualified according to AEC Q101
  • Green package (RoHS compliant), Pb-free plating, halogen free for mold
  • compound

応用

SWITCHING

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid IPW65R048CFDA Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 1943 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V Drain Current-Max (ID) 63.3 A
Drain-source On Resistance-Max 0.048 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 228 A Reference Standard AEC-Q101
Surface Mount NO Terminal Finish TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON
IDpuls max 228.0 A RthJA max 62.0 K/W
RthJC max 0.25 K/W Ptot max 500.0 W
Topology Full Bridge Special Features automotive
Qualification Automotive Package PG-TO247-3
VDS max 650.0 V VGS(th) min 3.5 V
Polarity N VGS(th) max 4.5 V
ID max 63.3 A Technology CoolMOS™ CFDA
Operating Temperature max 150.0 °C Operating Temperature min -40.0 °C
RDS (on) max 48.0 mΩ Mounting THT
QG max 270.0 nC

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

IRF5852TRPBF

IRF5852TRPBF

20V 2.7A Dual N-Channel MOSFET
IXFH14N100Q2

IXFH14N100Q2

IXFH14N100Q2 - MOSFET with 14 Amps and 1000V, featuring 0.90 Rds
MMBTA42-TP

MMBTA42-TP

NPN Silicon High Voltage Transistor
IRF7413TRPBF

IRF7413TRPBF

channel silicon mosfet, 13a current, 30v voltage, 0.011 ohm resistance
IRF9540NSPBF

IRF9540NSPBF

The IRF9540NSPBF MOSFET is a P-channel device designed for applications requiring a -100V voltage rating
DMN26D0UT

DMN26D0UT

Explore the capabilities of the DMN26D0UT N-Channel Mosfet, a game-changer in circuit design
JANTX2N690

JANTX2N690

Thyristor SCR 600V 150A 3-Pin(2+Tab) TO-3
DMN65D8LDW-7

DMN65D8LDW-7

The DMN65D8LDW-7 MOSFETs
IRF3808SPBF

IRF3808SPBF

Infineon IRF3808SPBF is a N-channel MOSFET featuring a 106 A current rating and 75 V HEXFET capability, packaged in a 3-Pin D2PAK configuration
SI9424DY

SI9424DY

This product, SI9424DY, is a MOSFET rated for 20V voltage and 7.7A current, with a power dissipation of 2.5W