IXFN48N50Q
Discrete Semiconductor Modules rated at 48 Amps, 500V and 0.1 Rds
在庫：7,794
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部品番号 : IXFN48N50Q
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パッケージ/ケース : SOT-227-4
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFN48N50Q データシート (PDF)
概要 IXFN48N50Q
When it comes to Power MOSFETs, the IXFN48N50Q stands out as a top contender in the Q-Class series. Its popularity among engineers and designers can be attributed to its low gate charge, excellent ruggedness, and fast intrinsic diode. These features make it a versatile option for both hard switching and resonant mode applications in the industrial sector. Additionally, the availability of the IXFN48N50Q in various standard industrial packages, including isolated types, adds to its attractiveness as a go-to solution for power management needs. Whether you're working on a project that requires reliability, efficiency, or both, the IXFN48N50Q Power MOSFET is well-equipped to meet your requirements
主な特長
- Supports high-frequency operation up to 100kHz
- Rugged design against electrostatic discharge (ESD)
- Limited inductive load switching capability
- Fully functional under high-power conditions
応用
- Versatile application scope
- Robust construction
- Cost-effective choice
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | 500 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.1 |
| Continuous Drain Current @ 25 ℃ (A) | 48 | Gate Charge (nC) | 190 |
| Input Capacitance, CISS (pF) | 6400 | Thermal resistance [junction-case] (K/W) | 0.26 |
| Configuration | Single | Package Type | SOT-227 |
| Power Dissipation (W) | 481 | Maximum Reverse Recovery (ns) | 250 |
| Sample Request | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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