IRFZ44NSTRRPBF
N-channel 55V 49A power MOSFET in D2PAK package, with a tab for heat dissipation, supplied in tape and reel packaging
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.809 | $0.81 |
| 200 | $0.314 | $62.80 |
| 500 | $0.303 | $151.50 |
| 1000 | $0.297 | $297.00 |
在庫：9,188
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IRFZ44NSTRRPBF
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パッケージ/ケース : TO-263-3
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Brand : International Rectifier
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Components Classification : Single FETs, MOSFETs
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日付シート : IRFZ44NSTRRPBF データシート (PDF)
概要 IRFZ44NSTRRPBF
The IRFZ44NSTRRPBF is a high-performance power MOSFET transistor designed by Infineon Technologies. This transistor is ideal for high power applications in various industries due to its impressive specifications. With a maximum drain-source voltage of 55V and a continuous drain current of 49A, it is well-suited for demanding switching tasks in automotive, industrial, and consumer electronics
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HEXFET® | Package | Bulk |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 25A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 25 V | Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK | Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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