• packageimg
packageimg

IRG4PC30S

Three-Pin TO-247AC Trans IGBT Chip

在庫：9,505

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください IRG4PC30S このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 IRG4PC30S

The IRG4PC30S is an innovative Insulated Gate Bipolar Transistor that offers outstanding performance capabilities for high power applications. With a maximum collector current of 43A and a maximum collector emitter voltage of 600V, this IGBT is tailored to deliver optimal results in motor control, induction heating, and power supply scenarios. The low saturation voltage of the IRG4PC30S plays a crucial role in enhancing efficiency by minimizing power dissipation. Additionally, its fast switching speed enables precise load control and facilitates high frequency operation, making it an ideal choice for applications requiring rapid switching like inverter drives and UPS systems

主な特長

  • Rapid response time
  • Low power consumption
  • Safe and reliable operation
  • Wide operating temperature range
  • Precise control capability
  • High efficiency performance

応用

  • Power supply solutions
  • Electric motor control
  • Heating technology

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Packaging Bag Part Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 34 A
Current - Collector Pulsed (Icm) 68 A Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 18A
Power - Max 100 W Switching Energy 260µJ (on), 3.45mJ (off)
Input Type Standard Gate Charge 50 nC
Td (on/off) @ 25°C 22ns/540ns Test Condition 480V, 18A, 23Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Package / Case TO-247-3 Supplier Device Package TO-247AC

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

NTJD4158CT1G

NTJD4158CT1G

Featuring a dual N/P-channel design
MJW16212

MJW16212

ROHS Compliant Bipolar Transistors
BSC050N10NS5ATMA1

BSC050N10NS5ATMA1

N-CHANNEL, 100V, 100A, 5MOHM, SuperSO8
PSMN070-200P

PSMN070-200P

Power Field-Effect Transistor with N-Channel
IRF6619

IRF6619

High-performance MOSFET for various electrical applications
SUD23N06-31-GE3

SUD23N06-31-GE3

N-channel MOSFET designed for high power applications with 50W power dissipation capability
SI7137DP-T1-GE3

SI7137DP-T1-GE3

P-Channel Silicon Power MOSFET with 42 Amperes Current Rating and 20 Volts Voltage Limit, featuring a 0.00195 Ohm On-Resistance
NVTR4503NT1G

NVTR4503NT1G

Product NVTR4503NT1G is a N-channel MOSFET with specifications of 30V voltage, 1.5A current, 420mW power dissipation, and 110mΩ resistance at 10V
BF998E6327HTSA1

BF998E6327HTSA1

BF998E6327HTSA1 null SOT-143 MOSFETs ROHS
SSM2212RZ

SSM2212RZ

Trans GP BJT NPN 40V 0.02A 8-Pin SOIC N Tube