SI3474DV-T1-GE3
P-Channel 12 V (D-S) MOSFET
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部品番号 : SI3474DV-T1-GE3
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パッケージ/ケース : TSOP-6
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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日付シート : SI3474DV-T1-GE3 データシート (PDF)
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Series : SI3474DV
概要 SI3474DV-T1-GE3
The SI3474DV-T1-GE3 is a high-quality small signal field-effect transistor designed for use in various electronic circuits. With a maximum current rating of 3.8A and a voltage capability of up to 100V, this N-channel silicon MOSFET offers reliable performance in a wide range of applications
主な特長
- Low on-resistance of 126mOhm at 10V
- Maximum drain-source voltage of 100V
- Maximum drain current of 3.8A
- Low gate-source threshold voltage of 1.8V
- High-speed switching
- Low gate charge
- Low input capacitance
- RoHS compliant
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | TSOP-6 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 3.8 A |
| Rds On - Drain-Source Resistance | 126 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 10.4 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 3.6 W | Channel Mode | Enhancement |
| Tradename | TrenchFET | Series | SI3 |
| Brand | Vishay / Siliconix | Configuration | Single |
| Fall Time | 20 ns | Product Type | MOSFET |
| Rise Time | 68 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 14 ns | Typical Turn-On Delay Time | 40 ns |
| Part # Aliases | SI3474DV-T1-BE3 | Unit Weight | 0.000705 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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