IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
在庫：9,871
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- 365日の品質保証
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部品番号 : IXBH42N170
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パッケージ/ケース : TO-247-3
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXBH42N170 データシート (PDF)
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Series : IXBH42N170
概要 IXBH42N170
With a groundbreaking design that combines the strengths of MOSFETs and IGBTs, the IXBH42N170 BiMOSFETs have revolutionized the high voltage device market. Utilizing non-epitaxial construction and cutting-edge fabrication processes, these devices offer unparalleled performance and reliability. The positive temperature coefficient of both the saturation voltage and the forward voltage drop of the intrinsic diode enables seamless parallel operation, enhancing efficiency and durability. Additionally, the integrated intrinsic body diode serves as a protective mechanism, redirecting inductive load current during device turn-off to prevent voltage transients and ensure the longevity of the device
主な特長
- Fast switching performance
- Fine pitch and low thermal resistance
- Safe operating area monitoring
応用
- Battery management systems
- Welding equipment
- Solar inverters
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | BIMOSFET™ | Package | Tube |
| Product Status | Active | Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector (Ic) (Max) | 80 A | Current - Collector Pulsed (Icm) | 300 A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 42A | Power - Max | 360 W |
| Input Type | Standard | Gate Charge | 188 nC |
| Reverse Recovery Time (trr) | 1.32 µs | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AD | Base Product Number | IXBH42 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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