IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $7.803 | $7.80 |
10 | $7.419 | $74.19 |
30 | $7.186 | $215.58 |
100 | $6.989 | $698.90 |
在庫:9,776
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXBH9N160G
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single IGBTs
-
日付シート : IXBH9N160G データシート (PDF)
-
Series : IXBH9N160
概要 IXBH9N160G
One of the key advantages of the IXBH9N160G is its positive voltage temperature coefficient, which allows for seamless parallel operation. This feature, coupled with the favorable saturation voltage and forward voltage drop of its intrinsic diode, makes the device highly efficient and reliable in demanding environments
主な特長
- Enhanced durability
- Simplified installation
- Fault-tolerant operation
- Increased capacity
応用
- Radar pulse transformers
- High voltage switches
- Laser power controllers
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | BIMOSFET™ | Package | Tube |
Product Status | Active | Voltage - Collector Emitter Breakdown (Max) | 1600 V |
Current - Collector (Ic) (Max) | 9 A | Current - Collector Pulsed (Icm) | 10 A |
Vce(on) (Max) @ Vge, Ic | 7V @ 15V, 5A | Power - Max | 100 W |
Input Type | Standard | Gate Charge | 34 nC |
Test Condition | 960V, 5A, 27Ohm, 10V | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Package / Case | TO-247-3 |
Supplier Device Package | TO-247AD | Base Product Number | IXBH9N160 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
DMN6068LK3-13
60V 6A 3-Pin Package
DKI06075
Product number DKI06075: Unveiling a robust Power Field-Effect Transistor, meticulously crafted for optimal performance in diverse applications
NTE186A
Silicon NPN Transistor with 3A I(C) and 40V V(BR)CEO
SI4447DY-T1-E3
This ROHS-compliant MOSFET has a maximum power dissipation of 1
BCY59X
BCY59X: NPN Bipolar Transistors for Low-Noise Audio
BSM200GA170DN2
The BSM200GA170DN2 is classified as an IGBT module, engineered for use in circuits requiring a voltage tolerance of 1
FQD7N30TM
TO-252-packaged N-Channel MOSFET, capable of handling 5.5A, 300V, with a resistance of 0.7ohm
UM6K1NTN
Transistor MOSFET Array
BSM50GD60DLC
Inquire for more information
SI1539DL-T1-E3
Recommended substitute for MOSFET: 78-SI1539CDL-T1-GE3