IXBK55N300

A groundbreaking innovation in the field of power electronics, BiMOSFETs like the IXBK55N300 seamlessly integrate the strengths of MOSFETs and IGBTs. This is made possible through state-of-the-art fabrication processes and non-epitaxial construction, resulting in a highly successful high voltage device. One of the key advantages of BiMOSFETs is their suitability for parallel operation, thanks to the positive voltage temperature coefficient of both saturation voltage and forward voltage drop of the intrinsic diode. Moreover, the inclusion of a "free" intrinsic body diode provides essential protection by offering an alternative path for inductive load current during device turn-off. This effectively prevents the occurrence of high Ldi/dt voltage transients that could potentially damage the device, ensuring its robustness in challenging operating conditions

主な特長

• Fast switching speeds
• High power handling
• Low current noise
• Improved reliability
• Simplified drive circuitry

応用

• Power supply applications
• High voltage circuits
• Uninterruptible power