IXBX64N250
Gate Drivers IXBX64N250 64A 2500V
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $411.734 | $411.73 |
| 210 | $164.285 | $34,499.85 |
| 510 | $158.796 | $80,985.96 |
| 990 | $156.083 | $154,522.17 |
在庫：5,428
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXBX64N250
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パッケージ/ケース : TO-247-3Variant
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXBX64N250 データシート (PDF)
概要 IXBX64N250
Introducing the game-changing product IXBX64N250, a BiMOSFET device that brings together the strengths of MOSFETs and IGBTs. Utilizing non-epitaxial construction and advanced fabrication processes, these high voltage devices have achieved unparalleled success. Their positive voltage temperature coefficient makes them perfect for parallel operation, and the free intrinsic body diode serves as a crucial protection diode, offering an alternative path for the inductive load current during device turn-off, thus preventing damage from high Ldi/dt voltage transients
主な特長
- Easy installation
- Precise control
- Robust operation
- High accuracy
応用
- High voltage pulsers
- Power supply modules
- Resonant-mode systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | BIMOSFET™ | Package | Tube |
| Product Status | Active | Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector (Ic) (Max) | 156 A | Current - Collector Pulsed (Icm) | 600 A |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 64A | Power - Max | 735 W |
| Input Type | Standard | Gate Charge | 400 nC |
| Td (on/off) @ 25°C | 49ns/232ns | Test Condition | 1250V, 128A, 1Ohm, 15V |
| Reverse Recovery Time (trr) | 160 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-247-3 Variant |
| Supplier Device Package | PLUS247™-3 | Base Product Number | IXBX64 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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