IXFB170N30P
High power MOSFET for polar applications
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $76.798 | $76.80 |
| 200 | $30.644 | $6,128.80 |
| 500 | $29.619 | $14,809.50 |
| 1000 | $29.114 | $29,114.00 |
在庫：8,267
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : IXFB170N30P
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パッケージ/ケース : TO-264-3
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ブランド : IXYS
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IXFB170N30P データシート (PDF)
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Series : IXFB170N30
概要 IXFB170N30P
Designed to excel in demanding applications, the IXFB170N30P Polar™ HiPerFETs stand out for their exceptional performance characteristics. With a focus on optimization and speed, these FETs feature a faster body diode with reduced reverse recovery time (trr), making them ideal for tasks like phase-shift bridges motor control and UPS operations. Boasting attributes such as low RDS(on), low RthJC, low Qg, and enhanced DV/DT capability, this HiPerFET family sets a new standard for efficiency and reliability
主な特長
- Reduced EMI Susceptibility
- Improved Heat Dissipation
- Suitable for Wide Range Applications
- High Reliability and Low Failures
応用
- Flexible DC-DC converters
- Secure power supply systems
- AC motor drive applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | HiPerFET™, Polar | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 300 V |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 85A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 258 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 20000 pF @ 25 V | Power Dissipation (Max) | 1250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | PLUS264™ | Package / Case | TO-264-3, TO-264AA |
| Base Product Number | IXFB170 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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