IXFK80N50P
0N50P is a high-voltage, high-current N-channel MOSFET
在庫：6,440
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXFK80N50P
-
パッケージ/ケース : TO-264-3
-
ブランド : IXYS
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : IXFK80N50P データシート (PDF)
-
Series : IXFK80N50
概要 IXFK80N50P
The IXFK80N50P family of HiPerFETs boasts a range of impressive features that set them apart from traditional power MOSFETs. With the lowest RDS(on) in their class, along with low RthJC and Qg, these FETs deliver unmatched performance in terms of power dissipation and switching characteristics. Additionally, their enhanced DV/DT capability makes them ideal for applications where fast switching speeds are crucial
主な特長
- Robust Construction
- Fault Tolerant
- Low EMI
応用
- High-frequency operation
- Efficient power management
- Low EMI
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | IXYS | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-264-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 65 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 197 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1.04 mW | Channel Mode | Enhancement |
| Tradename | HiPerFET | Series | IXFK80N50 |
| Brand | IXYS | Configuration | Single |
| Fall Time | 16 ns | Forward Transconductance - Min | 70 S |
| Height | 26.16 mm | Length | 19.96 mm |
| Product Type | MOSFET | Rise Time | 27 ns |
| Factory Pack Quantity | 25 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 70 ns |
| Typical Turn-On Delay Time | 25 ns | Width | 5.13 mm |
| Unit Weight | 0.352740 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
2N6383
TO-204AA (TO-3) package for compact designs
TIPL760A
Bipolar Transistors - BJT
IMZ1AT108
Small signal bipolar transistor with 0.15A collector current and 50V collector-emitter breakdown voltage, consisting of NPN and PNP silicon elements
BFU520AR
BFU520AR: A Silicon RF Transistor with NPN Wideband Design
2SC5287
Power Bipolar Transistor 2SC5287
PN4118
JFET N-Channel -40V Low Ciss
SQD19P06-60L-GE3
Vishay SQD19P06-60L-GE3 P-channel MOSFET Transistor, 11 A, -60 V, 3-Pin TO-252AA
ACS108-5SA
Triac sensitive gate
NTTFS5820NLTAG
With a voltage rating of 60 V, this Power Mosfet offers reliable performance in a compact WDFN-8 package
IXTH96N25T
TO-247 MOSFETs ROHS: Description of Product IXTH96N25T