IXFP22N65X2M
650V/22A MOSFET overmolded TO-220
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $1.894 | $1.89 |
10 | $1.657 | $16.57 |
30 | $1.509 | $45.27 |
100 | $1.358 | $135.80 |
500 | $1.289 | $644.50 |
1000 | $1.259 | $1,259.00 |
在庫:9,566
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXFP22N65X2M
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パッケージ/ケース : TO220-3
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ブランド : IXYS
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IXFP22N65X2M データシート (PDF)
概要 IXFP22N65X2M
In conclusion, the development of product IXFP22N65X2M represents a significant advancement in power semiconductor technology, offering engineers and designers a high-performance solution that meets the challenges of modern applications. Its combination of superior electrical characteristics and enhanced ruggedness make it a valuable addition to any power system design
主な特長
- Silicon carbide MOSFET
- Low RDS(on) and Qg
- High-quality components
- Easy thermal management
応用
- Efficient power supplies
- Next-gen battery tech
- Precision motor control
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Drain-Source Voltage (V) | 650 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.145 |
Continuous Drain Current @ 25 ℃ (A) | 22 | Gate Charge (nC) | 37 |
Input Capacitance, CISS (pF) | 2190 | Thermal resistance [junction-case] (K/W) | 3.37 |
Configuration | Single | Package Type | TO-220FP |
Typical Reverse Recovery Time (ns) | 145 | Power Dissipation (W) | 37 |
Sample Request | Yes | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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