IXGH16N170A
For details, kindly make contact
在庫:7,881
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXGH16N170A
-
パッケージ/ケース : TO247AD-3
-
ブランド : IXYS
-
コンポーネントの分類 : Single IGBTs
-
日付シート : IXGH16N170A データシート (PDF)
概要 IXGH16N170A
IGBT NPT 1700 V 16 A 190 W Through Hole TO-247AD
主な特長
- International standard packages
- JEDEC TO-268 and JEDEC TO-247 AD
- High current handling capability
- MOS Gate turn-on
- - drive simplicity
- Rugged NPT structure
- Molding epoxies meet UL 94 V-0 flammability classification
- SONICTM fast recovery copack diode
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247AD-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.7 kV | Collector-Emitter Saturation Voltage | 4.2 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 16 A |
Pd - Power Dissipation | 190 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | IXGH16N170 |
Brand | IXYS | Continuous Collector Current | 16 A |
Continuous Collector Current Ic Max | 40 A | Gate-Emitter Leakage Current | 100 nA |
Height | 21.46 mm | Length | 16.26 mm |
Operating Temperature Range | - 55 C to + 150 C | Product Type | IGBT Transistors |
Factory Pack Quantity | 30 | Subcategory | IGBTs |
Width | 5.3 mm | Unit Weight | 0.229281 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IXFH88N30P](/files/uploads/product/s/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
![IXTX200N10L2](/files/uploads/product/s/17a3358bd04d4b5e8c6a13cdd1b2d9ef.webp)
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
![IXFN82N60Q3](/files/uploads/product/s/f2245ef28d784934b1a736cc3df5ad3b.webp)
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
![IXFM50N20](/files/uploads/product/s/f1b6bc1886ef40cba5d27a6ca386cfb3.webp)
IXFM50N20
200-volt, 50-ampere MOSFET
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![IXFR24N50Q](/files/uploads/product/s/90ffae3e21e041d6af03d820c557a263.webp)
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
![IXA45IF1200HB](/img/package/to247.jpg)
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
![IXBH16N170](/img/package/to247ad.jpg)
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
![IXBH9N160G](/img/package/to247.jpg)
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
![IXBH42N170](/img/package/to247.jpg)
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
![ZXMN2F34FHTA](/img/package/sot23.jpg)
ZXMN2F34FHTA
20V N-Channel MOSFET, SOT23 RL Package, 4A
![SIR470DP-T1-GE3](/img/package/power33.jpg)
SIR470DP-T1-GE3
VISHAY - SIR470DP-T1-GE3 - MOSFET, N CHANNEL, 40V, 60A, POWERPAK SO
![AOD484](/img/package/dpak2.jpg)
AOD484
Rohs-compliant TO-MOSFETs for efficient circuit design
![VN3205N6](/img/package/pdip14.jpg)
VN3205N6
Low resistance MOSFET rated at 50V
![SQJ431AEP-T1_GE3](/img/package/power33.jpg)
SQJ431AEP-T1_GE3
200 volts, 9.4 amperes, 305 milliohms at 3.8 amperes, 10 volts, 68 watts, 3.5 volts at 250 microamperes P-Channel PowerPAK-SO-8 MOSFETs ROHS
![IRFB3207PBF](/img/package/to220.jpg)
IRFB3207PBF
With a drain-source voltage of 75V and a continuous drain current of 75A, the IRFB3207PBF is designed for use in a wide range of electronic devices
![SI1022R-T1-GE3](/img/package/sot23.jpg)
SI1022R-T1-GE3
MOSFET with a 60V drain-source voltage and a 20V gate-source voltage, packaged in SC75A
![2N5551G](/img/package/to92.jpg)
2N5551G
The 2N5551G is characterized by its NPN silicon composition, suitable for small signal tasks
![NDUL03N150CG](/img/package/to3pf.jpg)
NDUL03N150CG
1500V N-Channel Power MOSFET featuring a 2.5A current rating, 10.5 ohm resistance, TO-3PF-3L package, and 30-tube packaging
![IRGP4750DPBF](/img/package/to247ac.jpg)
IRGP4750DPBF
IRGP4750DPBF: A high-performance N-channel IGBT chip designed for power applications