IXGN320N60A3

The IXGN320N60A3 is a cutting-edge IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications. It offers a single continuous collector current of 320A and a collector-emitter voltage of 600V, providing exceptional performance in demanding environments. With a collector-emitter saturation voltage of 1.3V, the device minimizes power loss and enhances overall efficiency. Its power dissipation of 735W further demonstrates its ability to handle high levels of power without compromising reliability. The IXGN320N60A3 is housed in a SOT-227B package with 4 pins, allowing for easy integration into various electronic systems. Additionally, it is designed for surface mount mounting, offering flexibility in installation. The device is available in tube packaging and has a maximum reflow temperature of 260°C, ensuring secure solder connections during assembly. Its wide operating temperature range from -55°C to 150°C makes it suitable for use in extreme environmental conditions. The IXGN320N60A3 also features a gate-emitter voltage of 20V and an emitter leakage current of 400nA, further enhancing its overall performance and reliability. In summary, the IXGN320N60A3 is a state-of-the-art IGBT that meets the rigorous demands of industrial and automotive applications

主な特長

• Advanced power management
• Superior thermal conductivity
• Elevated surge immunity
• Improved voltage regulation
• Rapid transient response
• Fine-tuned energy efficiency

応用

• High performance
• Advanced technology
• Smart grids