IXGX75N250
Single Insulated Gate Bipolar Transistor Discrete 75 Amps 2500 Volts High Voltage Plus247 Through-Hole
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $308.652 | $308.65 |
| 210 | $123.154 | $25,862.34 |
| 510 | $119.039 | $60,709.89 |
| 990 | $117.006 | $115,835.94 |
在庫：7,338
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : IXGX75N250
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パッケージ/ケース : TO-247-3Variant
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Brand : IXYS
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Components Classification : Single IGBTs
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日付シート : IXGX75N250 データシート (PDF)
概要 IXGX75N250
The IXGX75N250 from Infineon Technologies is a top-of-the-line insulated gate bipolar transistor (IGBT) module that is setting the standard for high-power switching applications. With a robust design and impressive current and voltage ratings, this IGBT module is a powerhouse in the world of power electronics. Its compact size and durable construction allow for seamless integration into a variety of systems, making it a versatile choice for industrial drives, renewable energy solutions, and electric vehicles
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Active |
| IGBT Type | NPT | Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector (Ic) (Max) | 170 A | Current - Collector Pulsed (Icm) | 530 A |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 150A | Power - Max | 780 W |
| Input Type | Standard | Gate Charge | 410 nC |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant | Supplier Device Package | PLUS247™-3 |
| Base Product Number | IXGX75 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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