IXKC20N60C
Transistor MOSFET N-Channel Silicon 600V 15A 3-Pin with Tab in ISOPLUS 220 package
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $26.021 | $26.02 |
| 200 | $10.383 | $2,076.60 |
| 500 | $10.037 | $5,018.50 |
| 1000 | $9.865 | $9,865.00 |
在庫：8,977
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXKC20N60C
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パッケージ/ケース : TO220-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXKC20N60C データシート (PDF)
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Series : IXKC20N60
概要 IXKC20N60C
When it comes to high-quality power MOSFETs, the IXKC20N60C stands out from the rest. Its advanced Super Junction technology allows for unrivaled performance with the lowest RDS(on) in its class. The internal DCB isolation not only simplifies assembly but also reduces thermal resistance, ensuring optimal heat dissipation. Additionally, these MOSFETs are Avalanche rated, guaranteeing reliability and longevity in even the most demanding environments
主な特長
- Soft shutdown behavior
- Over-temperature protection
- Fault detection and protection
- (1)
応用
- Simple installation
- High power output
- Energy-efficient
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | 600 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.19 |
| Continuous Drain Current @ 25 ℃ (A) | 15 | Gate Charge (nC) | 87 |
| Input Capacitance, CISS (pF) | 2400 | Thermal resistance [junction-case] (K/W) | 1 |
| Configuration | Single | Package Type | ISOPLUS220AB |
| Typical Reverse Recovery Time (ns) | 500 | Power Dissipation (W) | 125 |
| Maximum Reverse Recovery (ns) | 800 | Isolated Tab RMS Voltage (V) | 2500 |
| Sample Request | No | Check Stock | Yes |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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