IXSK35N120AU1
1200V 70A IGBT Transistor Chip with N-Channel TO-264AA
在庫:5,112
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXSK35N120AU1
-
パッケージ/ケース : TO-264-3
-
Brand : IXYS
-
Components Classification : Single IGBTs
-
日付シート : IXSK35N120AU1 データシート (PDF)
-
Series : IXSK35N120
概要 IXSK35N120AU1
Housed in a TO-264 package, the IXSK35N120AU1 transistor offers excellent thermal conductivity for improved heat dissipation during operation. This not only enhances its reliability but also extends its lifespan, making it a cost-effective choice for long-term use in various applications. Additionally, its gate threshold voltage range of 2.5V to 4V allows for compatibility with a wide range of drive circuits, making it versatile and adaptable to different system configurations
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Bulk | Product Status | Obsolete |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 70 A |
Current - Collector Pulsed (Icm) | 140 A | Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 35A |
Power - Max | 300 W | Switching Energy | 10mJ (off) |
Input Type | Standard | Gate Charge | 150 nC |
Td (on/off) @ 25°C | 80ns/400ns | Test Condition | 960V, 35A, 2.7Ohm, 15V |
Reverse Recovery Time (trr) | 60 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Package / Case | TO-264-3, TO-264AA |
Supplier Device Package | TO-264AA (IXSK) | Base Product Number | IXSK35 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IXFH88N30P](/files/uploads/product/s/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
![IXTX200N10L2](/files/uploads/product/s/17a3358bd04d4b5e8c6a13cdd1b2d9ef.webp)
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
![IXFN82N60Q3](/files/uploads/product/s/f2245ef28d784934b1a736cc3df5ad3b.webp)
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
![IXFM50N20](/files/uploads/product/s/f1b6bc1886ef40cba5d27a6ca386cfb3.webp)
IXFM50N20
200-volt, 50-ampere MOSFET
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![IXFR24N50Q](/files/uploads/product/s/90ffae3e21e041d6af03d820c557a263.webp)
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
![IXA45IF1200HB](/img/package/to247.jpg)
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
![IXBH16N170](/img/package/to247ad.jpg)
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
![IXBH9N160G](/img/package/to247.jpg)
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
![IXBH42N170](/img/package/to247.jpg)
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
![FMY1AT148](/img/package/sot25.jpg)
FMY1AT148
0 V 300 mA SMT NPN/PNP series FMY1A SC-74A
![SI6423DQ-T1-GE3](/img/package/tssop8.jpg)
SI6423DQ-T1-GE3
This MOSFET, designated SI6423DQ-T1-GE3, operates as a P-Channel device with a Drain-Source voltage of 12 volts
![IRLU2705](/img/package/ipak.jpg)
IRLU2705
effect transistor
![MJD31CG](/img/package/dpak.jpg)
MJD31CG
The product MJD31CG is a NPN bipolar power transistor capable of handling up to 3
![STG3P3M25N60](/img/package/to-3.jpg)
STG3P3M25N60
Trans IGBT Module N-CH 600V 50A 19-Pin SEMITOP 3 Box
![SCT2120AFC](/img/package/to220.jpg)
SCT2120AFC
SiC MOSFET rated for 650V with current capability varying from 29 to 220A
![MMSS8550-L-TP](/img/package/sot23.jpg)
MMSS8550-L-TP
Lead free plastic package-3
![FMMT723TA](/img/package/sot23.jpg)
FMMT723TA
Transistor,2.5A,PNP,100V,SOT23 Diodes Inc FMMT723TA PNP Bipolar Transistor, 1 A, 100 V, 3-Pin SOT-23
![FZT955TA](/files/uploads/product/s/31fb5d20-652f-43ee-29b8-08dbc6589f1f.webp)
FZT955TA
PNP Bipolar Junction Transistor for General Purpose Applications with 140V Voltage and 4A Current
![SIHG22N60E-GE3](/img/package/to247.jpg)
SIHG22N60E-GE3
SIHG22N60E-GE3 MOSFET: Featuring 600V Vds and 30V Vgs, encapsulated in a TO-247AC package