MJ11029
Bipolar Power Darlington Transistors for use in general purpose amplifiers
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $4.996 | $5.00 |
| 10 | $4.773 | $47.73 |
| 25 | $4.637 | $115.92 |
| 100 | $4.291 | $429.10 |
在庫：8,519
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : MJ11029
-
パッケージ/ケース : TO-204-2(TO-3)
-
Brand : onsemi
-
Components Classification : Single Bipolar Transistors
-
日付シート : MJ11029 データシート (PDF)
-
Series : MJ11029
概要 MJ11029
These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.
主な特長
- Safe Operating Area to +150°C
- Robust Against Electromagnetic Interference
- Simple and Easy to Use - No Additional Components Needed
応用
AMPLIFIER仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | Darlington Transistors | RoHS | N |
| Configuration | Single | Transistor Polarity | PNP |
| Collector- Emitter Voltage VCEO Max | 60 V | Emitter- Base Voltage VEBO | 5 V |
| Collector- Base Voltage VCBO | 60 V | Maximum DC Collector Current | 50 A |
| Pd - Power Dissipation | 300 mW | Mounting Style | Through Hole |
| Package / Case | TO-204-2 (TO-3) | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Brand | onsemi |
| Continuous Collector Current | 50 A | DC Collector/Base Gain hfe Min | 400, 1000 |
| Height | 8.51 mm | Length | 38.86 mm |
| Product Type | Darlington Transistors | Factory Pack Quantity | 100 |
| Subcategory | Transistors | Width | 26.67 mm |
| Unit Weight | 0.056438 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
MJ802
Trans GP BJT NPN 90V 30A 200000mW 3-Pin(2+Tab) TO-3 Bag
MJD44H11G
SILICON PLASTIC/EPOXY 2 PIN TRANSISTOR
MJD3055T4G
Transistor, General Purpose NPN Bipolar Junction, 60 Volts, 10 Amperes, 3-Pin with 2 Tabs, DPAK Package, Tape and Reel
MJD44H11T4G
MJD44H11T4G is an NPN bipolar transistor with a maximum voltage rating of 80V and a power dissipation of 1
MJ11030
The Bipolar Power Darlington Transistors featured in this product are specifically suited for complementary general purpose amplifier applications
MJ14002
ROHS TO-204 Bipolar Transistors
MJB44H11T4-A
Trans GP BJT NPN 80V 10A 50000mW Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
MJH6287
MJH6287 is a silicon-based power bipolar transistor designed with a maximum collector current of 20A and a breakdown voltage of 100V
MJF18008
Bipolar Power Transistor MJF18008, featuring an 8.0 A current capacity and 450 V voltage rating
SIZ340DT-T1-GE3
MOSFET Dual N-Channel with 30V and 30/40A PowerPAIR8EP
HUF75545S3ST
The HUF75545S3ST MOSFET is RoHS compliant and comes in a TO-263AB package with null voltage of 10V and 4V at 250uA
BUZ77B
Advanced N-channel enhancement mode power transistor technology for precise switchin
IRLHS2242TRPBF
Negative 30 volts, negative 8.5 amps
TJ30S06M3L(T6L1,NQ
The gate capacitance of this MOSFET is 3950pF
BFP780H6327XTSA1
RF Amplifier RF BIP TRANSISTORS
APT14M120B
Powerfully built TO-package for maximum performance and safet
IRF6648TRPBF
channel MOSFET with a 60V voltage rating
SI4178DY-T1-GE3
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel
RD3H045SPTL1
TO-252 (DPAK) MOSFET with -45V voltage and -4.5A current specifications