MJ802
Trans GP BJT NPN 90V 30A 200000mW 3-Pin(2+Tab) TO-3 Bag
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $4.582 | $4.58 |
200 | $1.774 | $354.80 |
500 | $1.712 | $856.00 |
1000 | $1.681 | $1,681.00 |
在庫:9,642
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : MJ802
-
パッケージ/ケース : TO-204-2
-
Brand : Onsemi
-
Components Classification : Single Bipolar Transistors
-
日付シート : MJ802 データシート (PDF)
-
Series : MJ802
概要 MJ802
This transistor is for use as an output device in complementary audio amplifiers to 100¿Watts music power per channel.
![](/files/uploads/product/b/7ef44efcf4e64c359d38f6c32762a303.webp)
主な特長
- High DC Current Gain - hFE = 25-100 @ IC = 7.5 A
- Excellent Safe Operating Area
- Complement to the PNP MJ4502
- Pb-Free Package is Available
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-204-2 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 90 V | Collector- Base Voltage VCBO | 100 V |
Emitter- Base Voltage VEBO | 4 V | Collector-Emitter Saturation Voltage | 800 mV |
Maximum DC Collector Current | 30 A | Pd - Power Dissipation | 200 W |
Gain Bandwidth Product fT | 2 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Brand | onsemi |
Continuous Collector Current | 30 A | DC Collector/Base Gain hfe Min | 25 |
Height | 8.51 mm | Length | 39.37 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 100 |
Subcategory | Transistors | Technology | Si |
Width | 26.67 mm | Unit Weight | 0.056438 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![MJD44H11G](/files/uploads/product/s/032174501b2949b08d53dc7036faeb5d.webp)
MJD44H11G
SILICON PLASTIC/EPOXY 2 PIN TRANSISTOR
![MJD3055T4G](/files/uploads/product/s/26c03a7d587644ee865266fba4b7a14f.webp)
MJD3055T4G
Transistor, General Purpose NPN Bipolar Junction, 60 Volts, 10 Amperes, 3-Pin with 2 Tabs, DPAK Package, Tape and Reel
![MJD44H11T4G](/files/uploads/product/s/1b854609343e47148bb0c6bcc525d4c4.webp)
MJD44H11T4G
MJD44H11T4G is an NPN bipolar transistor with a maximum voltage rating of 80V and a power dissipation of 1
![MJ11029](/img/package/to-3.jpg)
MJ11029
Bipolar Power Darlington Transistors for use in general purpose amplifiers
![MJ11030](/img/package/to-3.jpg)
MJ11030
The Bipolar Power Darlington Transistors featured in this product are specifically suited for complementary general purpose amplifier applications
![MJ14002](/img/package/to3.jpg)
MJ14002
ROHS TO-204 Bipolar Transistors
![MJB44H11T4-A](/img/package/d2pak.jpg)
MJB44H11T4-A
Trans GP BJT NPN 80V 10A 50000mW Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
![MJH6287](/img/package/sot3.jpg)
MJH6287
MJH6287 is a silicon-based power bipolar transistor designed with a maximum collector current of 20A and a breakdown voltage of 100V
![MJF18008](/img/package/to-220f.jpg)
MJF18008
Bipolar Power Transistor MJF18008, featuring an 8.0 A current capacity and 450 V voltage rating
![IXTQ22N60P](/img/package/to-3.jpg)
IXTQ22N60P
Transistor MOSFET N-channel with 600V voltage rating and 22A current capacity in TO-3P package
![IXXH50N60C3D1](/img/package/to247.jpg)
IXXH50N60C3D1
600V/100Amp XPT IGBT C3-Class IGBT Transistors CoPacked
![BSC050N10NS5ATMA1](/img/package/son8.jpg)
BSC050N10NS5ATMA1
N-CHANNEL, 100V, 100A, 5MOHM, SuperSO8
![UM6K33NTN](/img/package/sot236.jpg)
UM6K33NTN
MOSFET,dual,N-channel,50V,0.2A,SOT363 ROHM UM6K33NTN Dual N-channel MOSFET Transistor, ±200 mA, 50 V, 6-Pin SOT-363
![TIP122TU](/img/package/to220.jpg)
TIP122TU
NPN Darlington Bipolar Power Transistor with a current rating of 5.0 Amps and voltage rating of 100 Volts
![BC546BZL1G](/img/package/to92.jpg)
BC546BZL1G
BC546BZL1G: NPN Transistors with 80V voltage and 100mA current
![HGT1S20N60C3S9A](/files/uploads/product/s/400a06655a774af79f3aa24a539db50e.webp)
HGT1S20N60C3S9A
The HGT1S20N60C3S9A is a high-performance N-Channel IGBT, capable of handling 45A at 600V
![RFP2N08L](/img/package/to220.jpg)
RFP2N08L
This powerful MOSFET delivers precise control and fast switching speeds for optimal system operation
![SI2392ADS-T1-GE3](/img/package/sot23.jpg)
SI2392ADS-T1-GE3
20V Vgs 100V Vds SOT-23 MOSFET
![IRF7842TRPBF](/img/package/soic8.jpg)
IRF7842TRPBF
18 A, 40 V HEXFET