MMBT5551
Trans GP BJT NPN 160V 0.6A 300mW
在庫：5,282
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部品番号 : MMBT5551
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パッケージ/ケース : SOT23
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ブランド : Onsemi
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コンポーネントの分類 : Single Bipolar Transistors
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日付シート : MMBT5551 データシート (PDF)
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Series : MMBT5551
概要 MMBT5551
Designed with performance and efficiency in mind, the MMBT5551 is a top-notch component for high voltage amplification and driver applications. Its NPN configuration allows for easy integration into a wide range of circuit designs, providing flexibility and reliability in operation. With a replacement option available in the MMBT5551L, users can easily find a suitable alternative without compromising on performance
主な特長
- This device is designed for genera purpose high voltage amplifiers and gas discharge display drivers
応用
- This product is general usage and suitable for many different applications.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | Bipolar Transistors - BJT | RoHS | Details |
| Mounting Style | SMD/SMT | Package / Case | SOT-23 |
| Transistor Polarity | NPN | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 160 V | Emitter- Base Voltage VEBO | 6 V |
| Collector-Emitter Saturation Voltage | 200 mV | Maximum DC Collector Current | 600 mA |
| Pd - Power Dissipation | 250 mW | Gain Bandwidth Product fT | 300 MHz |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Series | MMBT-BJT | Brand | Diotec Semiconductor |
| DC Current Gain hFE Max | 250 | Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | Subcategory | Transistors |
| Tradename | MMBT5551 | Unit Weight | 0.001376 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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