IXGH25N250
RoHS-compliant 250W power transistors
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $138.581 | $138.58 |
210 | $55.296 | $11,612.16 |
510 | $53.448 | $27,258.48 |
990 | $52.534 | $52,008.66 |
在庫:9,572
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXGH25N250
-
パッケージ/ケース : TO247-3
-
Brand : IXYS
-
Components Classification : Single IGBTs
-
日付シート : IXGH25N250 データシート (PDF)
概要 IXGH25N250
When it comes to reliability and durability, the IXGH25N250 doesn't disappoint. Housed in a compact yet rugged package, this module is built to withstand even the harshest of operating environments. Equipped with internal gate resistors and temperature sensors, achieving precise control of switching characteristics has never been easier. Whether you're looking for efficiency, performance, or resilience, the IXGH25N250 ticks all the right boxes for your high-power IGBT module needs
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247AD-3 |
Series | Very High Voltage | Brand | IXYS |
Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
Subcategory | IGBTs | Unit Weight | 0.225753 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IXFH88N30P](/files/uploads/product/s/7ef4f017e4a243b89c8637b1fe24c3f4.webp)
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
![IXTX200N10L2](/files/uploads/product/s/17a3358bd04d4b5e8c6a13cdd1b2d9ef.webp)
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
![IXFN82N60Q3](/files/uploads/product/s/f2245ef28d784934b1a736cc3df5ad3b.webp)
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
![IXFM50N20](/files/uploads/product/s/f1b6bc1886ef40cba5d27a6ca386cfb3.webp)
IXFM50N20
200-volt, 50-ampere MOSFET
![IXTM24N50](/files/uploads/product/s/19a8ff5ca1e04374b45c5f4c6e3d33ce.webp)
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
![IXFR24N50Q](/files/uploads/product/s/90ffae3e21e041d6af03d820c557a263.webp)
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
![IXA45IF1200HB](/img/package/to247.jpg)
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
![IXBH16N170](/img/package/to247ad.jpg)
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
![IXBH9N160G](/img/package/to247.jpg)
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
![IXBH42N170](/img/package/to247.jpg)
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
![MMBTA42-TP](/files/uploads/product/s/50cd4818b0434dc6a8c81905e021d487.webp)
MMBTA42-TP
NPN Silicon High Voltage Transistor
![CPV364M4K](/img/product.png)
CPV364M4K
Presenting the CPV364M4K
![ZXMP2120FFTA](/img/package/sot23f.jpg)
ZXMP2120FFTA
The ZXMP2120FFTA MOSFET is a P-channel device suitable for various applications
![UMD2NTR](/img/package/sot363.jpg)
UMD2NTR
SOT-363 packaged NPN and PNP dual digital transistor with built-in bias resistor
![MAC4DCMT4G](/img/package/dpak.jpg)
MAC4DCMT4G
Silicon Controlled Rectifier 4A 600V
![IRFB4019PBF](/img/package/to220.jpg)
IRFB4019PBF
The IRFB4019PBF is a MOSFET known for its 150V voltage rating, 17A current handling capacity, 95mOhm on-resistance, and 13nC gate charge
![DMG3406L-13](/img/package/sot23.jpg)
DMG3406L-13
The DMG3406L-13 is a high-performance N-Channel MOSFET
![SIR626LDP-T1-RE3](/img/package/power33.jpg)
SIR626LDP-T1-RE3
High-current N-Channel Power MOSFET
![SI4484EY](/img/package/soic8.jpg)
SI4484EY
Efficient 3.8W MOSFET with 100V rating
![FQD7P06TM](/img/package/dpak.jpg)
FQD7P06TM
TO-252-3-packaged MOSFET with P-channel, operating at -60V and -5.4A