MMDT5451-7-F

Diodes Incorporated's MMDT5451-7-F dual NPN/PNP digital transistor is a versatile and reliable component for a wide range of electronic applications. With its compact SOT-563 surface-mount package, it is well-suited for integration into space-constrained designs, offering flexibility and ease of implementation. The bidirectional level shifting and signal inversion capabilities provided by the NPN and PNP transistors make it an ideal choice for digital logic circuits, enabling seamless integration into various circuit configurations. Its maximum collector current of 100mA for both transistors and maximum power dissipation of 250mW ensure optimal performance and energy efficiency. Additionally, the MMDT5451-7-F boasts a low saturation voltage of 0.2V at a collector current of 10mA, making it suitable for battery-powered applications. With a high transition frequency of 300MHz, this digital transistor delivers fast switching speeds for enhanced signal processing. Furthermore, its maximum operating temperature of 150°C ensures reliable performance in challenging environmental conditions, making it a robust solution for demanding industrial and automotive applications