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MTP12N10E

12 A, 100 V N-CHANNEL POWER MOSFET, 0.16 ohm

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概要 MTP12N10E

The MTP12N10E power MOSFET is a versatile component that is ideal for a wide range of high-speed switching applications. With a drain-source voltage rating of 100V and a continuous drain current rating of 12A, this N-channel device offers reliable performance in power supplies, lighting, and motor control systems. Its low on-resistance of 0.18 ohms ensures efficient power conversion with minimal power dissipation, making it a cost-effective solution for various electronic designs

主な特長

  • Smart grid ready semiconductor
  • Efficient energy harvesting enabled
  • Robust thermal management ensured
    • High power density achieved
    • Fast startup times guaranteed
    • Reliable operation assured

応用

  • Industrial automation
  • Power management
  • Energy systems

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

ECCN (US) EAR99 Part Status Obsolete
HTS 8541.29.00.95 SVHC Yes
SVHC Exceeds Threshold Yes Automotive No
PPAP No Category Power MOSFET
Material Si Configuration Single
Channel Mode Enhancement Channel Type N
Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) ±20 Maximum Continuous Drain Current (A) 12
Maximum Drain Source Resistance (MOhm) 160@10V Typical Gate Charge @ Vgs (nC) 18@10V
Typical Gate Charge @ 10V (nC) 18 Typical Input Capacitance @ Vds (pF) 600@25V
Maximum Power Dissipation (mW) 79000 Typical Fall Time (ns) 30
Typical Rise Time (ns) 64 Typical Turn-Off Delay Time (ns) 21
Typical Turn-On Delay Time (ns) 10 Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175 Packaging Rail
Mounting Through Hole Package Height 9.28(Max)
Package Width 4.82(Max) Package Length 10.28(Max)
PCB changed 3 Tab Tab
Standard Package Name TO Supplier Package TO-220AB
Pin Count 3

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    部品の品質保証: 365 日

    返品・返金：90日以内

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