NGTB25N120IHLWG
N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip
在庫：8,320
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部品番号 : NGTB25N120IHLWG
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パッケージ/ケース : TO-247-3
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Brand : onsemi
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Components Classification : Single IGBTs
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日付シート : NGTB25N120IHLWG データシート (PDF)
概要 NGTB25N120IHLWG
The NGTB25N120IHLWG product showcases cutting-edge technology with its Field Stop (FS) Trench construction, making it a top choice for demanding switching applications. Its impressive performance characteristics include a low on-state voltage and minimal switching loss, ensuring optimal efficiency in operation. Ideal for resonant or soft switching applications, this Insulated Gate Bipolar Transistor (IGBT) offers unparalleled reliability and functionality. Moreover, the inclusion of a rugged co-packaged free-wheeling diode with low forward voltage enhances its overall performance
主な特長
- Faster Response Time
- Higher Current Handling
- Larger Operating Range
- Improved Isolation
応用
- Industrial power solutions
- Solar energy systems
- Automotive electrification
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 200 A | Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 25A |
| Power - Max | 192 W | Switching Energy | 800µJ (off) |
| Input Type | Standard | Gate Charge | 200 nC |
| Td (on/off) @ 25°C | -/235ns | Test Condition | 600V, 25A, 10Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-247-3 | Supplier Device Package | TO-247-3 |
| Base Product Number | NGTB25 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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