NGTB35N65FL2WG
Trans IGBT Chip N-CH 650V 70A 300W 3-Pin(3+Tab) TO-247 Tube
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $2.956 | $2.96 |
| 10 | $2.572 | $25.72 |
| 30 | $2.331 | $69.93 |
| 100 | $2.083 | $208.30 |
| 500 | $1.972 | $986.00 |
| 1000 | $1.924 | $1,924.00 |
在庫：9,646
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : NGTB35N65FL2WG
-
パッケージ/ケース : TO-247-3
-
Brand : onsemi
-
Components Classification : Single IGBTs
-
日付シート : NGTB35N65FL2WG データシート (PDF)
概要 NGTB35N65FL2WG
When it comes to high-power applications, the NGTB35N65FL2WG IGBT stands out as a top choice. Its innovative design and advanced features make it a versatile and dependable component for a wide range of projects. Whether you're an experienced professional or a hobbyist looking to enhance your creations, this IGBT is sure to impress with its superior performance and cost-effective design
主な特長
- Silicon Nitride Passivation
- Robust Surge Protection
- Fine Pitch Stacking
- High Power Density
- Low Equivalent Series Resistance
- Excellent Power Cycling Capability
応用
- Industrial
- Grade
- Technology
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Active |
| IGBT Type | Trench Field Stop | Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 70 A | Current - Collector Pulsed (Icm) | 120 A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 35A | Power - Max | 300 W |
| Switching Energy | 840µJ (on), 280µJ (off) | Input Type | Standard |
| Gate Charge | 125 nC | Td (on/off) @ 25°C | 72ns/132ns |
| Test Condition | 400V, 35A, 10Ohm, 15V | Reverse Recovery Time (trr) | 68 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-247-3 | Supplier Device Package | TO-247-3 |
| Base Product Number | NGTB35 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
NGD8205ANT4G
The NGD8205ANT4G is a Transistor IGBT Chip designed in an N-Channel configuration
NGTB50N60FLWG
Transistor IGBT chip with N-channel, 600V rating, 100A current, and 223W power in TO-247 package
MAC12SNG
Featuring 4-quadrant logic level operation, the MAC12SNG is an 800V, 12A TRIAC enclosed in a TO-220AB package
MAC8SNG
220AB 5mA 10mA 800V ROHS TRIACs
NGB8245NT4G
ON Semiconductor NGB8245NT4G IGBT Transistor 50A 500V 4-Pin D2PAK
NTP6413ANG
Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube
NGTB20N120LWG
Trans IGBT Chip N-CH 1200V 40A 192W 3-Pin(3+Tab) TO-247 Tube
NGTG15N60S1EG
TO-220 IGBTs ROHS
NGTB40N120IHLWG
Trans IGBT Chip N-CH 1200V 80A 260W 3-Pin(3+Tab) TO-247 Tube
NGTB30N120IHSWG
Trans IGBT Chip N-CH 1200V 60A 192W 3-Pin(3+Tab) TO-247 Tube
PD54008TR-E
Trans RF MOSFET N-CH 25V 5A 3-Pin PowerSO-10RF (Formed lead) T/R
BSM150GB120DN2F
Modules IGBT 1200V 150A IGBT
PMV50EPEAR
MOSFET PMV50EPEA/SOT23/TO-236AB
IXSN35N120AU1
Distributor of Electronics from France Established in 1988
IXTH130N10T
High-power N-type MOSFET rated at 100V and 130A
NTMFS4C08NT1G
0V N Channel MOSFET with 5.8mΩ resistance at 10V and 18A current rating
FQP22P10
Product Type: Power MOSFET, P-Channel 100V
IPD80R1K0CEATMA1
Infineon IPD80R1K0CEATMA1 N-channel MOSFET Transistor
IRLML6402GTRPBF
High-performance P-Channel FET with 0.065ohm resistance
BUK7227-100B
Silicon-based general purpose power FET