NSL12AWT1G
High current PNP low VCE(sat) bipolar transistor
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 5 | $0.082 | $0.41 |
| 50 | $0.067 | $3.35 |
| 150 | $0.060 | $9.00 |
| 500 | $0.054 | $27.00 |
| 3000 | $0.050 | $150.00 |
| 6000 | $0.048 | $288.00 |
在庫：7,957
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : NSL12AWT1G
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パッケージ/ケース : 6-TSSOP
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Brand : onsemi
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Components Classification : Single Bipolar Transistors
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日付シート : NSL12AWT1G データシート (PDF)
概要 NSL12AWT1G
With the NSL12AWT1G, users can expect exceptional performance and reliability in their low voltage, high speed switching systems. The transistor's ultra low saturation voltage VCE(sat) ensures minimal power loss and maximum efficiency, while its high current gain capability allows for seamless energy control. These features make it a valuable component for applications where precision and affordability are essential
主な特長
- High-Speed Data Transfer
- Low Power Consumption
- Compact Physical Size
- Easy Integration with Other Components
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tape & Reel (TR) | Product Status | Obsolete |
| Transistor Type | PNP | Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V | Vce Saturation (Max) @ Ib, Ic | 290mV @ 20mA, 1A |
| Current - Collector Cutoff (Max) | 100nA | DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 800mA, 1.5 V |
| Power - Max | 450 mW | Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Base Product Number | NSL12 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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