NSVMUN531335DW1T1G
Reliable V device with A current rating and low power consumptio
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.240 | $0.24 |
200 | $0.093 | $18.60 |
500 | $0.090 | $45.00 |
1000 | $0.088 | $88.00 |
在庫:5,360
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : NSVMUN531335DW1T1G
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パッケージ/ケース : SOT-363-6
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ブランド : onsemi
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コンポーネントの分類 : Bipolar Transistor Arrays, Pre-Biased
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日付シート : NSVMUN531335DW1T1G データシート (PDF)
概要 NSVMUN531335DW1T1G
The NSVMUN531335DW1T1G digital transistor offers a convenient solution for electronic circuit design by integrating a monolithic bias network into a single device. With a series base resistor and a base-emitter resistor included in its design, the BRT eliminates the need for separate external resistor bias networks, ultimately reducing system cost and board space. This makes the NSVMUN531335DW1T1G an efficient and space-saving option for electronic devices that require streamlined circuitry
主な特長
- Boosts Signal Strength
- Faster Data Transfer Rates
- Effortless Power Management
- Advanced Error Correction
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Transistor Type | 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max) | 100mA | Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47kOhms, 2.2kOhms | Resistor - Emitter Base (R2) | 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V | Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA | Power - Max | 187mW |
Grade | Automotive | Qualification | AEC-Q101 |
Mounting Type | Surface Mount | Package / Case | SOT-363-6 |
Supplier Device Package | SC-88/SC70-6/SOT-363 | Base Product Number | NSVMUN531335 |
Manufacturer | onsemi | Product Category | Bipolar Transistors - Pre-Biased |
RoHS | Details | Configuration | Dual |
Transistor Polarity | NPN, PNP | Typical Input Resistor | 47 kOhms |
Typical Resistor Ratio | 1, 0.047 | Mounting Style | SMD/SMT |
DC Collector/Base Gain hfe Min | 80 | Collector- Emitter Voltage VCEO Max | 50 V |
Continuous Collector Current | 100 mA | Pd - Power Dissipation | 385 mW |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Brand | onsemi | Channel Mode | Enhancement |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | Factory Pack Quantity | 3000 |
Subcategory | Transistors | Unit Weight | 0.000265 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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