NVB110N65S3F

The NVB110N65S3F is a state-of-the-art silicon carbide power module tailored for demanding industrial and automotive applications. Its 650V, 110A SiC MOSFET, and integrated gate driver IC offer unparalleled performance in a sturdy, compact package. The module's SiC MOSFET boasts low on-state resistance, rapid switching speeds, and exceptional temperature resilience, making it the go-to choice for high-power and high-reliability applications. The gate driver IC ensures precise control over MOSFET switching, leading to highly efficient power conversion and reduced electromagnetic interference. Furthermore, the NVB110N65S3F is equipped with built-in temperature sensors and protection circuits to safeguard against overheating, over-current, and short circuits, thereby enhancing its overall reliability and durability. With a wide operating temperature range and the ability to thrive in harsh environments, this power module is undeniably suitable for a diverse range of rigorous applications

主な特長

• Silicon Carbide Material
• Robust Overcurrent Protection
• Efficient Heat Dissipation
• Faster Charge Discharge Rate

応用

• Variable frequency drives
• Photovoltaic arrays
• Wind turbine generators