NVBG160N120SC1
MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $10.062 | $10.06 |
10 | $8.850 | $88.50 |
30 | $8.111 | $243.33 |
100 | $6.871 | $687.10 |
在庫:5,446
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : NVBG160N120SC1
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パッケージ/ケース : D2PAK-7L
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ブランド : onsemi
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コンポーネントのカテゴリ : Single FETs, MOSFETs
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日付シート : NVBG160N120SC1 データシート (PDF)
概要 NVBG160N120SC1
Meet the NVBG160N120SC1, an advanced EliteSiC MOSFET that represents a significant leap forward in switching performance and reliability. Through its low ON resistance and compact chip size, this innovative MOSFET delivers low capacitance and gate charge, leading to a range of system benefits including enhanced efficiency, faster operation frequency, increased power density, reduced EMI, and a more compact system size. With these advantages, the NVBG160N120SC1 is set to revolutionize power management and electronic applications by offering a more efficient and reliable solution to address the demands of today's technology-driven world
主な特長
- Compact and Energy Efficient
- Ruggedized for Harsh Environments
- High Reliability and Low Failures Rate
- Packed with Advanced Features
- Fully Tested for Quality Assurance
- Compliant to International Standards
応用
- Flexible configuration
- Long lifespan
- Energy-saving features
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | Technology | SiC |
Mounting Style | SMD/SMT | Package / Case | D2PAK-7L |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 1.2 kV | Id - Continuous Drain Current | 19.5 A |
Rds On - Drain-Source Resistance | 224 mOhms | Vgs - Gate-Source Voltage | - 15 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage | 4.3 V | Qg - Gate Charge | 33.8 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 136 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Brand | onsemi |
Configuration | Single | Fall Time | 7.4 ns |
Forward Transconductance - Min | 5.5 S | Product Type | MOSFET |
Rise Time | 11 ns | Factory Pack Quantity | 800 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 15 ns | Typical Turn-On Delay Time | 11 ns |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、または DHL.SG、または YTC。
部品のパッケージング保証: 100% ESD 帯電防止保護を特徴とする当社のパッケージングには、高い靭性と優れた緩衝機能が組み込まれています。
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