PD57060-E
SO-10 MOSFETs conforming to ROHS standards
在庫:5,331
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : PD57060-E
-
パッケージ/ケース : PowerSO
-
ブランド : Stmicroelectronics
-
コンポーネントの分類 : RF FETs, MOSFETs
-
日付シート : PD57060-E データシート (PDF)
概要 PD57060-E
Engineered for RF applications, the PD57060-E RF FET boasts a drain source voltage of 65V and a continuous drain current of 7A, making it suitable for high-power requirements. With a generous power dissipation of 79W, this transistor can handle demanding operating conditions with ease. The Powerso-10RF case design enhances thermal performance, ensuring efficient heat dissipation for prolonged reliability. Moreover, the PD57060-E is RoHS compliant, meeting environmental standards for sustainable manufacturing practices. In summary, STMicroelectronics' PD57060-E RF FET delivers exceptional performance and reliability for RF circuit designs
主な特長
- Increased frequency range
- Improved spectral purity
- Faster data transmission
- Enhanced system performance
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
ECCN US | EAR99 | ECCN EU | NEC |
Packing Type | Tube | RoHs compliant | Ecopack2 |
Grade | Industrial | Package Name | PowerSO-10RF (formed lead) |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![PD55003L-E](/files/uploads/product/s/44c3e3b3bc404b28adc98b763c4a33b7.webp)
PD55003L-E
Trans RF MOSFET N-CH 40V 2.5A 14-Pin Power Flat T/R
![TPDV1240RG](/files/uploads/product/s/08ec2ca175e94f329e2245c62e1ac637.webp)
TPDV1240RG
1200V TPDV1240RG Triac with 1.5V Gate Trigger and 200mA Current
![UPD784031GC-8BT-A](/files/uploads/product/s/a6fb697f0eb94cfcbc62414b8a3fe407.webp)
UPD784031GC-8BT-A
Versatile solution for complex control tasks
![IPD25N06S4L-30](/files/uploads/product/s/7993550de14049b4a82e2ce39e835e15.webp)
IPD25N06S4L-30
Transistor MOSFET N-Channel 60V 25A for Automotive Use
![FGH40T65UPD](/img/package/to247.jpg)
FGH40T65UPD
650-Volt N-Channel Transistor IGBT Chip
![IPD053N08N3GATMA1](/img/package/dpak2.jpg)
IPD053N08N3GATMA1
MOSFET with Trench technology for 40-100V voltage range
![IPD100N04S402ATMA1](/img/package/dpak2.jpg)
IPD100N04S402ATMA1
Trans MOSFET N-CH 40V 100A Automotive
![IPD200N15N3GATMA1](/img/package/to252.jpg)
IPD200N15N3GATMA1
The IPD200N15N3GATMA1 product boasts a 40% decrease in R DS(on) and a 45% improvement in figure of merit (FOM) compared to its closest competitor
![IPD320N20N3GATMA1](/img/package/dpak2.jpg)
IPD320N20N3GATMA1
MOSFET N-Ch 200V 34A OptiMOS3 DPAK
![IPD380P06NMATMA1](/img/package/dpak2.jpg)
IPD380P06NMATMA1
MOSFET TRENCH 40 - 100V
![ACST410-8B](/img/package/dpak2.jpg)
ACST410-8B
TRIAC 800V 32A 3-Pin(2+Tab) DPAK Tube
![MJ2955G](/img/package/to3.jpg)
MJ2955G
With a current capacity of 15 amperes and a voltage handling capability of 60 volts, the MJ2955G is a PNP bipolar power transistor
![FDS3812](/img/package/soic8.jpg)
FDS3812
Small-outline integrated circuit (SOIC) package with 8 pins
![IXFB52N90P](/img/package/to-3.jpg)
IXFB52N90P
N-Channel MOSFET with 52A Discharge Current and 900V Voltage Rating
![2SD2704KT146](/img/package/sot23.jpg)
2SD2704KT146
Small Signal NPN Si Transistor 20 V 300 mA
![FGA180N33ATDTU](/img/package/to3pn.jpg)
FGA180N33ATDTU
180A current capability with 390mW power dissipation
![SI1302DL-T1-E3](/img/package/sc70.jpg)
SI1302DL-T1-E3
SI1302DL-T1-E3, N-channel MOSFET Transistor 0.6 A 30 V, 3-Pin SOT-323
![IXFK120N20](/img/package/to264.jpg)
IXFK120N20
Inquire for specifics
![IRLR3705ZTRPBF](/img/package/dpak.jpg)
IRLR3705ZTRPBF
TO-252AA-packaged N-channel MOSFET with 55V voltage rating and 42A current handling capability, provided on tape reel
![IRLR8743TRPBF](/img/package/dpak.jpg)
IRLR8743TRPBF
Trans MOSFET N-Channel 30V 160A 3-Pin(2+Tab) DPAK Tape and Reel