SBC846BPDW1T2G
Trans GP BJT NPN/PNP 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.150 | $0.15 |
200 | $0.058 | $11.60 |
500 | $0.056 | $28.00 |
1000 | $0.055 | $55.00 |
在庫:7,835
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SBC846BPDW1T2G
-
パッケージ/ケース : SOT-363-6
-
ブランド : onsemi
-
コンポーネントの分類 : Bipolar Transistor Arrays
-
日付シート : SBC846BPDW1T2G データシート (PDF)
概要 SBC846BPDW1T2G
With the SBC846BPDW1T2G transistor, you can trust that your amplifier applications will meet and exceed your expectations. Its dual NPN PNP design, combined with its surface mount capabilities, make it a practical choice for a wide range of projects. Upgrade your electronic designs with this high-quality transistor and experience enhanced performance and efficiency
主な特長
- Advanced Power Management and Protection Schemes
- High-Speed Data Transfer Rates and Low Latency
- Designed to Withstand Harsh Environmental Conditions
応用
- Exciting news coming soon
- Stay tuned for updates
- Amazing things are in store
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 100mA | Voltage - Collector Emitter Breakdown (Max) | 65V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA | Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V | Power - Max | 380mW |
Frequency - Transition | 100MHz | Operating Temperature | -55°C ~ 150°C (TJ) |
Grade | Automotive | Qualification | AEC-Q101 |
Mounting Type | Surface Mount | Package / Case | SOT-363-6 |
Supplier Device Package | SC-88/SC70-6/SOT-363 | Base Product Number | SBC846 |
Manufacturer | onsemi | Product Category | Bipolar Transistors - BJT |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | NPN, PNP | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 65 V | Collector- Base Voltage VCBO | 80 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 600 mV, 650 mV |
Maximum DC Collector Current | 100 mA | Pd - Power Dissipation | 380 mW |
Gain Bandwidth Product fT | 100 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | BC846BPDW1 |
Brand | onsemi | DC Collector/Base Gain hfe Min | 200 |
DC Current Gain hFE Max | 475 | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Technology | Si | Unit Weight | 0.000265 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BSB044N08NN3GXUMA1](/img/package/son2.jpg)
BSB044N08NN3GXUMA1
N-type Silicon MOSFET Transistor with 80V Voltage Rating and 18A Current Capacity for Automotive Applications
![SBC846BWT1G](/img/package/sot23.jpg)
SBC846BWT1G
Trans GP BJT NPN 65V 0.1A 200mW Automotive AEC-Q101 3-Pin SC-70 T/R
![SISB46DN-T1-GE3](/img/package/power33.jpg)
SISB46DN-T1-GE3
N-channel MOSFET transistor capable of handling 40V and 11.4A in an 8-pin PowerPAK 1212 EP package
![FSB560](/img/package/sot233.jpg)
FSB560
Trans GP BJT NPN 60V 2A 500mW 3-Pin SOT-23 T/R
![SBSS84LT1G](/img/package/sot233.jpg)
SBSS84LT1G
The SBSS84LT1G is a P-channel MOSFET designed to operate at voltages up to 50 volts and currents of 0
![BSB013NE2LXI](/img/product.png)
BSB013NE2LXI
MOSFET N-channel CanPAK-3 MX OptiMOS
![SBC847BPDXV6T1G](/img/package/so5.jpg)
SBC847BPDXV6T1G
0.1A Collector Current
![SBC817-25LT1G](/img/package/sot23.jpg)
SBC817-25LT1G
Automotive Trans GP BJT NPN 45V 0.5A 300mW 3-Pin SOT-23 T/R
![SBC846BPDW1T1G](/img/package/sc70.jpg)
SBC846BPDW1T1G
Small Outline SMD package with 6 pins
![SBCP53-16T1G](/img/package/sot223.jpg)
SBCP53-16T1G
80V Voltage Rating
![DMC3400SDW-7](/img/package/sot363.jpg)
DMC3400SDW-7
6-Pin SOT-363 Package Transistor MOSFET with 30V Voltage and 0.65A/0.45A Current Dual-Functionality
![IRF9388TRPBF](/img/package/so8.jpg)
IRF9388TRPBF
The MOSFET model IRF9388TRPBF is specifically designed for P-channel operation
![ZXTP722MATA](/img/package/dfn20.jpg)
ZXTP722MATA
PNP Bipolar Transistor ZXTP722MATA from Diodes Inc
![DMP3037LSS-13](/img/package/soic8.jpg)
DMP3037LSS-13
Product DMP3037LSS-13, also known as 'P-CH 30V 5
![IMBF170R650M1XTMA1](/img/package/to263.jpg)
IMBF170R650M1XTMA1
Individual Silicon Carbide MOSFET
![IRFS4115PBF](/img/package/d2pak.jpg)
IRFS4115PBF
IRFS4115PBF is a MOSFET component with a voltage rating of 150V, a current rating of 195A, and a resistance of 12.1mΩ at 10V and 62A
![SI3443CDV-T1-GE3](/img/package/tsop6.jpg)
SI3443CDV-T1-GE3
Small Signal Si Transistor, 20 V, 5970 mA"
![BCP5616QTA](/img/package/sot223.jpg)
BCP5616QTA
4-Pin Power Bipolar Transistor with 80V Collector-Emitter Voltage Rating
![MAT01AHZ](/files/uploads/product/s/a30a24ea-d84f-4d35-7b55-08dbc6589f1f.webp)
MAT01AHZ
Trans GP BJT NPN 45V 0.025A 1800mW 6-Pin TO-78 Tube
![IRL2910SPBF](/img/package/to252.jpg)
IRL2910SPBF
N-channel MOSFET Transistor