SGP15N60
SGP15N60 Insulated Gate Bipolar Transistor with 15A and 600V TO220
在庫:7,902
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部品番号 : SGP15N60
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パッケージ/ケース : TO-220-3
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Brand : Infineon
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Components Classification : Single IGBTs
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日付シート : SGP15N60 データシート (PDF)
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Series : SGP15N60
概要 SGP15N60
IGBT NPT 600 V 31 A 139 W Through Hole PG-TO220-3-1
主な特長
- High-speed switching for improved system responsiveness
- Robust insulation for safe operation in demanding environments
- Reduced power losses for increased system efficiency
- Fully compliant with industry standards and regulations
応用
- Efficient power conversion
- Modern appliance design
- Robust automotive systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-220-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Series | SGP15N60 | Brand | Infineon Technologies |
Continuous Collector Current Ic Max | 31 A | Height | 9.25 mm |
Length | 10 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 500 | Subcategory | IGBTs |
Width | 4.4 mm | Part # Aliases | SGP15N60XK SP000683124 SGP15N60XKSA1 |
Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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